Semiconductor packages and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Fa Chen, Nien-Fang Wu, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih
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Abstract
Semiconductor packages and method of forming the same are disclosed. One of the semiconductor packages includes a first die, a second die, a through via and a dielectric encapsulation. The second die is bonded to the first die. The through via is disposed aside the second die and electrically connected to the first die. The through via includes a step-shaped sidewall. The dielectric encapsulation encapsulates the second die and the through via.
Claims20
A semiconductor package, comprising:
- a first die;
- a second die bonded to the first die;
- a through via, disposed aside the second die and electrically connected to the first die, the through via comprising a first portion having a first width and a second portion having a second width different from the first width, the second portion disposed between the first portion and the first die, wherein the first portion comprises a first seed layer and a first conductive layer, the second portion comprises a second seed layer and a second conductive layer, the first seed layer is disposed aside an interface between the first conductive layer and the second conductive layer, and the second seed layer is disposed between the second conductive layer and the dielectric encapsulation and between the second conductive layer and the first die;
- and
- a dielectric encapsulation, encapsulating the second die and the through via.
A semiconductor package, comprising:
- a first die;
- a plurality of second dies bonded to the first die;
- a through via, disposed between the second dies and electrically connected to the first die, wherein the through via comprises a first portion and a second portion between the first portion and the first die;
- a first dielectric layer, encapsulating the first portion;
- and
- a second dielectric layer different from the first dielectric layer, encapsulating the second dies, the second portion of the through via and the first dielectric layer.
A method of forming a semiconductor package, comprising:
- providing a first die and a plurality of second dies bonded to the first die;
- forming a first dielectric layer over the first die to cover the plurality of second dies;
- forming a first opening in the first dielectric layer between the second dies;
- forming a through via partially in the first opening and partially protruding from the first opening, wherein a first portion of the through via protruding from the first opening has a first width, and a second portion of the through via in the first opening has a second width different from the first width;
- and
- forming a second dielectric layer between the through via and the first dielectric layer on a sidewall of the second die.
Dependencies are inferred from the claim text.