Semiconductor device having specified p-type dopant concentration profile

A semiconductor device, comprising:

• a first semiconductor structure;
• a second semiconductor structure on the first semiconductor structure;
• an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises multiple alternating well layers and barrier layers, wherein each of the barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface;
• an electron blocking region between the second semiconductor structure and the active region, wherein the electron blocking region comprises a first electron blocking layer having a band gap greater than the band gap of one of the barrier layers;
• a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the electron blocking region;
• a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies in the electron blocking region and at a distance of between 15 nm and 60 nm from the upper surface of the active region;
• and
• a semiconductor stack between the active region and the first semiconductor structure, wherein the semiconductor stack comprises alternating first semiconductor layers and second semiconductor layers,
• wherein each of the second semiconductor layers comprises a Group III element with a highest content, and the highest content of the second semiconductor layer closer to the active region is higher than the highest content of the second semiconductor layer farther from the active region.