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US 11,056,429 B2Granted
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
AssigneeTessera, Inc.
InventorsBenjamin David Briggs, Lawrence A. Clevenger, Bartlet H. Deprospo, Huai Huang, Christopher J. Penny, Michael Rizzolo
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Abstract
A semiconductor device includes a porous dielectric layer including a recessed portion, a conductive layer formed in the recessed portion, and a cap layer formed on the porous dielectric layer and on the conductive layer in the recessed portion, an upper surface of the porous dielectric layer being exposed through a gap in the cap layer.
Claims19
A method of forming a semiconductor device, the method comprising:
- forming a pore-filled porous dielectric layer including a recessed portion;
- forming a conductive layer in the recessed portion;
- forming a cap layer on the pore-filled porous dielectric layer and on the conductive layer;
- and
- removing at least a portion of the cap layer to expose an upper surface of the pore-filled porous dielectric layer through a gap in the cap layer to provide an exposed upper surface of the pore-filled porous dielectric layer.
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A method of forming a semiconductor device, the method comprising:
- forming a conductive layer in a first recessed portion of a pore-filled porous dielectric layer;
- removing a top portion of the conductive layer to form a second recessed portion;
- depositing a cap layer on the pore-filled porous dielectric layer and an upper surface of the conductive layer;
- depositing an interlayer dielectric on the cap layer;
- and
- polishing the interlayer dielectric and the cap layer to form a gap in the cap layer such that an upper surface of the pore-filled porous dielectric layer is exposed through the gap to provide an exposed upper surface of the pore-filled porous dielectric layer.
3 more elements
Dependencies are inferred from the claim text.