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US 11,056,428 B2Granted
Semiconductor device extension insulation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHung-Chih Yu, Chien-Mao Chen
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Abstract
A semiconductor device includes: a plurality of vertical conductive structures, wherein each of the plurality of vertical conductive structures extends through an isolation layer; and an insulated extension disposed horizontally between a first one and a second one of the plurality of vertical conductive structures.
Claims15
A semiconductor device, comprising:
- a plurality of vertical conductive structures, wherein each of the plurality of vertical conductive structures extends through an isolation layer;
- and
- an insulated extension disposed horizontally between a first vertical conductive structure and a second vertical conductive structure of the plurality of vertical conductive structures, wherein the insulated extension comprises an insulation depth extending into a portion of the first vertical conductive structure and a portion of the isolation layer between the first and second vertical conductive structure, wherein the insulated extension is structurally coupled to the first vertical conductive structure and is separated from the second vertical conductive.
A semiconductor device, comprising:
- a substrate having a plurality of conductive features formed therein;
- an isolation layer disposed above the substrate;
- a plurality of vertical conductive structures extending through the isolation layer;
- an insulated extension disposed horizontally between a first vertical conductive structure and a second vertical conductive structure of the plurality of vertical conductive structures, wherein the insulated extension comprises an insulation depth extending into a portion of the first vertical conductive structure and a portion of the isolation layer between the first vertical conductive structure and the second vertical conductive structure, wherein the first and second vertical conductive structures are conductively coupled to respective ones of the plurality of conductive features;
- a first intermediate layer disposed between the substrate and the isolation layer;
- and
- first and second intermediate horizontal conductive structures formed in the first intermediate layer, wherein the first and second intermediate horizontal conductive structures are conductively coupled to the first and second vertical conductive structures, respectively, and wherein the insulated extension is structurally coupled to the first vertical conductive structure and is separated from the second vertical conductive structure.
4 more elements
A semiconductor device, comprising:
- a substrate having a plurality of conductive features formed therein;
- an isolation layer disposed above the substrate;
- a plurality of vertical conductive structures extending through the isolation layer;
- an insulated extension disposed horizontally between a first vertical conductive structure and a second vertical conductive structure of the plurality of vertical conductive structures, wherein the insulated extension comprises an insulation depth extending into a portion of the first vertical conductive structure and a portion of the isolation layer between the first vertical conductive structure and the second vertical conductive structure, wherein the first and second vertical conductive structures are conductively coupled to respective ones of the plurality of conductive features;
- a first intermediate layer disposed between the substrate and the isolation layer;
- first and second intermediate horizontal conductive structures formed in the first intermediate layer, wherein the first and second intermediate horizontal conductive structures are conductively coupled to the first and second vertical conductive structures, respectively;
- a second intermediate layer disposed between the first intermediate layer and the substrate;
- and
- third and fourth vertical conductive structures formed in the second intermediate layer, wherein the third and fourth vertical conductive structures are conductively coupled to the first and second intermediate horizontal conductive structures,
- wherein the insulated extension is structurally coupled to the first vertical conductive structure and is separated from the second vertical conductive structure.
7 more elements
Dependencies are inferred from the claim text.