Structural enhancement of Cu nanowires
AssigneeInternational Business Machines Corporation
InventorsDaniel C. Edelstein, Chih-Chao Yang
Life of this patent
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Abstract
A structure comprising a first dielectric layer embedded with a first interconnect structure. An insulator layer is disposed on the first dielectric layer. A second dielectric layer is disposed on the insulator layer. A via resides within the second dielectric layer. A second interconnect structure is isolated from the first dielectric layer. A first portion of a bottom surface of the via resides on a top surface of the insulator layer. A second portion of the bottom surface of the via resides on a first portion of a top surface of the first interconnect structure.
Claims14
A structure, comprising:
- a first dielectric layer embedded with a first interconnect structure;
- a second interconnect structure isolated from the first dielectric layer;
- an insulator layer disposed on the first dielectric layer;
- a second dielectric layer disposed on the insulator layer;
- and
- a nitridized layer disposed on at least a portion of:
- a first side surface of the second dielectric layer, a second side surface of the second dielectric layer and a portion of a top surface of the insulator layer;
- wherein the second interconnect structure is embedded into the first interconnect structure and isolated from the first dielectric layer by the nitridized layer, a capping layer and the insulator layer, and a second portion of a bottom surface of the second dielectric layer is embedded in the insulator layer.
A structure, comprising:
- a first dielectric layer embedded with a first interconnect structure that is coupled with a diffusion barrier layer;
- an insulator layer disposed on the first dielectric layer;
- a second dielectric layer disposed on the insulator layer;
- a nitridized layer disposed on at least a portion of:
- a first side surface of the second dielectric layer, a second side surface of the second dielectric layer and a portion of a top surface of the insulator layer;
- and
- a second interconnect structure isolated from the first dielectric layer, the second interconnect structure embedded into the first interconnect structure;
- wherein the second interconnect structure is isolated from the first dielectric layer by the nitridized layer, a capping layer and the insulator layer, and a second portion of a bottom surface of the second dielectric layer is embedded in the insulator layer.
Dependencies are inferred from the claim text.