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US 11,056,420 B2Granted
Pressing-type semiconductor power device package
AssigneeJMJ Korea Co., Ltd.
InventorsYunhwa Choi, Jeonghun Cho, Jungtae Cho
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Abstract
The present invention relates generally to a pressing-type semiconductor power device package, and more specifically to a pressing-type semiconductor power device package in which a semiconductor chip, such as a transistor or diode, is formed into a package via a pressing structure without using any conductive adhesive, such as solder, which is used in the past, thereby improving production efficiency and durability.
Claims9
A semiconductor power device package, comprising:
- at least one upper metal plate located above a device;
- and
- at least one lower metal plate located below the device;
- wherein the device is a transistor chip, the at least one upper metal plate comprises, sequentially from a top thereof, a first metal plate responsible for a gate and a second metal plate responsible for an emitter, and the at least one lower metal plate comprises a third metal plate responsible for a collector,
- wherein one or more coupling holes are formed in each of the at least one upper and lower metal plates, and the at least one upper and lower metal plates are fastened and structurally connected by pressing members passing through the coupling holes, so that electrical connections are established among the device and the at least one upper and lower metal plates.
2 more elements
Dependencies are inferred from the claim text.