Methods and systems for controlling wafer fabrication process

A process controller for controlling a semiconductor fabrication process, comprising:

• a critical dimension determination component configured to obtain a measurement of a critical dimension of a representative feature within a given area on a first wafer after completion of a fabrication process on the first wafer, the representative feature having a critical dimension response to a specified process control parameter that is correlated to a critical dimension response to the specified process control parameter of other features within the given area on the first wafer;
• a process adjustment component configured to determine an adjustment to the specified process control parameter that will move the measurement of the critical dimension of the representative feature within the given area on the first wafer toward a target critical dimension for the representative feature, wherein the process adjustment component evaluates a correlation between a change in the critical dimension of the representative feature and a change in the specified process control parameter, wherein the process adjustment component determines a critical dimension adjustment of the representative feature to achieve the target critical dimension for the representative feature, and wherein the process adjustment component determines the adjustment to the specified process control parameter by substituting the critical dimension adjustment of the representative feature for the change in the critical dimension of the representative feature in the correlation;
• and
• a process control component configured to direct performance of the fabrication process on a second wafer using the adjustment to the specified process control parameter, wherein a configuration of the second wafer upon entering the fabrication process is equal to a configuration of the first wafer upon entering the fabrication process.