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AssigneeApplied Materials Israel Ltd.
InventorsRoman Kris, Grigory Klebanov, Dhananjay Singh Rathore, Einat Frishman, Sharon Duvdevani-Bar, Assaf Shamir, Elad Sommer, Jannelle Anna Geva, Daniel Alan Rogers, Ido Friedler, Avi Aviad Ben Simhon
Estimating the term…
An evaluation system that may include an imager; and a processing circuit. The imager may be configured to obtain an electron image of a hole that is formed by an etch process, the hole exposes at least one layer of a one or more sets of layers, each set of layers comprises layers that differ from each other by their electron yield and belong to an intermediate product. The processing circuit may be configured to evaluate, based on the electron image, whether the hole ended at a target layer of the intermediate product. The intermediate product is manufactured by one or more manufacturing stages of a manufacturing process of a three dimensional NAND memory unit. The hole may exhibit a high aspect ratio, and has a width of a nanometric scale.
An evaluation system, comprising:
A method for evaluating a hole formed by an etch process and that exhibits a high aspect ratio and has a width of a nanometric scale, the method comprising:
A non-transitory computer readable medium that stores instructions for obtaining an electron image of a hole formed by an etch process and that exhibits a high aspect ratio and has a width of a nanometric scale, the hole exposing at least one layer of one or more sets of layers, wherein each set of layers comprises layers that differ from each other by their electron yield and belongs to an intermediate product manufactured by one or more manufacturing stages of a manufacturing process of a three dimensional NAND memory unit;
Dependencies are inferred from the claim text.