Wafer with beveled edge region and method for analyzing shape of the same
AssigneeSK Siltron Co., Ltd.
InventorsWoo Sung Lee, Eung Ju Lee
Life of this patent
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Abstract
Embodiments provide a method of analyzing a shape of a wafer, including: measuring a cross-sectional shape of a plurality of wafers; obtaining a first angle formed by a first line connecting a first point to a second point having a maximum curvature in an edge region of the wafer and a front surface of the wafer; forming a thin film layer on a surface of each of the wafers; measuring a thickness profile of an edge region of the wafer on which each of the thin film layers is formed; and confirming a wafer having a smallest maximum thickness profile of the thin film layer among the plurality of wafers.
Claims4
A wafer comprising:
- a bulk region;
- a front surface and a back surface of the bulk region opposite and parallel to each other;
- and
- an edge region disposed at an edge of the bulk region,
- wherein the edge region includes a bevel portion and an apex of an edge thereof,
- wherein the bevel portion includes a first point having a maximum curvature and a second point spaced apart in a direction of the apex from the first point, which are disposed in order from the front surface toward the apex,
- wherein a first angle formed by a first line connecting the first point to the second point and a front surface of the wafer is 22 degrees or less, and
- wherein the second point is positioned at a distance of 50 to 90 micrometers in a horizontal direction from a start point of the bevel portion of the edge region of the wafer.
Dependencies are inferred from the claim text.