US 11,056,402 B2 · Integrated circuit chip and manufacturing method therefor, and gate drive circuit

Abstract

An integrated circuit chip and a manufacturing method therefor, and a gate drive circuit, the integrated circuit chip comprising: a semiconductor substrate (103), a high voltage island (101a) being formed in the semiconductor substrate (103); a high voltage junction terminal (102a), the high voltage junction terminal (102a) surrounding the high voltage island (101a), a depletion type MOS device (N1) being formed on the high voltage junction terminal (102a), a gate electrode and a drain electrode of the depletion type MOS device (N1) being short connected, and a source electrode of the depletion type MOS device (N1) being connected to a high side power supply end (VB) of the integrated circuit chip; and a bipolar transistor (Q1), a collector electrode of the bipolar transistor (Q1) being short connected to the substrate and being connected to a low side power supply end (VCC) of the integrated circuit chip, an emitter of the bipolar transistor (Q1) being connected to a gate electrode of the depletion type MOS device (N1).

Claims15

Dependent claims

An integrated circuit chip, comprising:

a semiconductor substrate, in which a high-voltage island for manufacturing a high-voltage gate driving circuit is formed;
a high-voltage junction terminal surrounding the high-voltage island, the high-voltage junction terminal including a depletion mode MOS formed around the high voltage island, a gate and a drain of the depletion mode MOS being short-circuited, and a source of the depletion mode MOS being connected to a high-side power source terminal;
and
a bipolar transistor, a collector and a base of the bipolar transistor being short-circuited, the collector of the bipolar transistor being connected to a low-side power source terminal, and an emitter of the bipolar transistor being connected to the gate of the depletion mode MOS.

1 more element

A method for manufacturing an integrated circuit chip, comprising:

providing a semiconductor substrate, and forming a high-voltage island for manufacturing a high-voltage gate driving circuit in the semiconductor substrate;
forming a high-voltage junction terminal in the semiconductor substrate, wherein the high-voltage junction terminal surrounds the high voltage island, the high-voltage junction terminal includes a depletion mode MOS formed around the high voltage island, a gate and a drain of the depletion mode MOS are short-circuited, and a source of the depletion mode MOS is connected to a high-side power source terminal of the integrated circuit chip;
and
forming a bipolar transistor in the semiconductor substrate, wherein a collector and a base of the bipolar transistor are short-circuited, the collector of the bipolar transistor is connected to a low-side power source terminal of the integrated circuit chip, and an emitter of the bipolar transistor is connected to the gate of the depletion mode MOS device.

1 more element

Dependencies are inferred from the claim text.

Integrated circuit chip and manufacturing method therefor, and gate drive circuit

Life of this patent

Integrated circuit chip and manufacturing method therefor, and gate drive circuit

Life of this patent

Abstract

Claims15