Semiconductor device and method

A semiconductor device comprising:

• a substrate;
• a first source/drain region and a second source/drain region over the substrate;
• a first nanowire and a second nanowire disposed between the first source/drain region and the second source/drain region, the first nanowire and the second nanowire comprising a same semiconductor material, the first nanowire extending further from the substrate than the second nanowire;
• a gate dielectric material around the first nanowire and around the second nanowire, the gate dielectric material extending continuously from the first nanowire to the second nanowire;
• an inner spacer between the first nanowire and the second nanowire, and between the first source/drain region and the gate dielectric material;
• a gate material around the gate dielectric material;
• and
• a semiconductor fin over the substrate and laterally adjacent to the first nanowire and the second nanowire, wherein the semiconductor fin extends further from the substrate than the first nanowire, wherein the gate dielectric material is disposed over an upper surface of the semiconductor fin distal to the substrate, and wherein the gate material is disposed over the gate dielectric material.

A method of manufacturing a semiconductor device, the method comprising:

• forming a stack of semiconductor materials over a substrate, the stack of semiconductor materials comprising alternating layers of a first semiconductor material and a second semiconductor material;
• forming a dummy gate structure over the stack of semiconductor materials;
• removing a first portion of the stack of semiconductor materials from opposing sides of the dummy gate structure to form recesses, wherein after the removing, a second portion of the stack of semiconductor materials remains under the dummy gate structure;
• after the removing, replacing end portions of the first semiconductor material disposed under the dummy gate structure with a dielectric material;
• forming source/drain regions in the recesses after the replacing;
• and
• selectively removing the first semiconductor material after forming the source/drain regions, wherein after the selectively removing, the second semiconductor material in the second portion of the stack of semiconductor materials forms nanowires.