Methods for fabricating FinFETs having different fin numbers and corresponding FinFETs thereof

A method comprising:

• forming a first spacer and a second spacer over a substrate, wherein the first spacer and the second spacer are each disposed over the substrate in a first region corresponding with a first FinFET and in a second region corresponding with a second FinFET, wherein the first spacer and the second spacer each extend without interruption from the first region corresponding with the first FinFET to the second region corresponding with the second FinFET, wherein the first spacer and the second spacer have a first spacing therebetween in the first region corresponding with the first FinFET and a second spacing therebetween in the second region corresponding with the second FinFET, and wherein the second spacing is greater than the first spacing;
• patterning the substrate using the first spacer and the second spacer, thereby forming a first fin and a second fin, wherein the first fin and the second fin have the first spacing therebetween in the first region and the second spacing therebetween in the second region;
• and
• partially removing the second fin from the second region.

A method comprising:

• forming a patterning layer including a first material over a substrate;
• forming a dummy pattern over the patterning layer, wherein the dummy pattern includes a second material that is different than the first material, the dummy pattern has a first width in a first FinFET region and a second width in a second FinFET region, and the second width is greater than the first width;
• performing a deposition process and a first etching process to form a first spacer along a first sidewall of the dummy pattern and a second spacer along a second sidewall of the dummy pattern, wherein the first spacer and the second spacer each include a third material that is different than the first material and the second material;
• performing a second etching process to remove the dummy pattern to define a first spacing between the first spacer and the second spacer in the first FinFET region and a second spacing between the first spacer and the second spacer in the second FinFET region, wherein the second spacing is greater than the first spacing;
• performing a third etching process on the substrate using the first spacer and the second spacer as an etch mask, thereby forming a first fin and a second fin extending from the substrate, wherein the first fin and the second fin are separated by the first spacing in the first FinFET region and separated by the second spacing in the second FinFET region;
• and
• performing a fourth etching process on the second fin in the second FinFET region, thereby leaving a residual second fin in the second FinFET region.