US 11,056,388 B2Granted

Mask-integrated surface protective tape

AssigneeFurukawa Electric Co., Ltd.

InventorYusuke Goto

Life of this patent

Estimating the term…

Loading patent…

Abstract

A surface protective tape, which is used for a method of producing a semiconductor chip including the steps (a) to (d), and contains a substrate film, and a radiation-curable temporary-adhesive layer and a radiation-curable mask material layer provided on the film in this order; wherein, in the step (b), peeling occurs between the temporary-adhesive layer and the mask material layer before irradiation, and between the mask material layer and the patterned surface described below after irradiation: (a) in the state of having laminated the tape on the side of a patterned surface of a semiconductor wafer, grinding the backing-face of the wafer; laminating a wafer fixing tape on the backing-face side of the ground wafer; and supporting and fixing the wafer to a ring flame; (b) after integrally peeling both the film and the temporary-adhesive layer from the tape thereby to expose the mask material layer on top, forming an opening by cutting a portion of the mask material layer corresponding to a street of the wafer with a laser; (c) a plasma-dicing step of segmentalizing the wafer on the street by a SF6 plasma, and thereby for singulating the wafer into semiconductor chips; and (d) an ashing step of removing the mask material layer by an O2 plasma.

Claims4

Dependent claims

A mask-integrated surface protective tape, comprising:

a substrate film;
a radiation-curable temporary-adhesive layer;
and
a radiation-curable mask material layer;
wherein the radiation-curable temporary-adhesive layer and the radiation-curable mask material layer are provided on the substrate film in this order;
wherein, peeling occurs between the temporary-adhesive layer and the mask material layer before irradiation with radiation, and peeling occurs between the mask material layer and a patterned surface of a semiconductor wafer after irradiation with radiation;
wherein the mask material layer and the temporary-adhesive layer each contain a (meth)acrylic copolymer, and a radiation-polymerizable compound having a mass average molecular weight in a range of 2,000 to 20,000 and having a bifunctional, trifunctional, or higher-functional radiation-polymerizable functional group;
wherein glass transition temperatures (Tg) of the (meth)acrylic copolymer contained in the mask material layer and the (meth)acrylic copolymer contained in the temporary-adhesive layer each are −25° C. to −5° C.:
wherein an acid value of at least one of the (meth)acrylic copolymer contained in the mask material layer and the (meth)acrylic copolymer contained in the temporary-adhesive layer is 0 to 10 mgKOH/g;
wherein an absolute value of a difference between the glass transition temperature (Tg) of the (meth)acrylic copolymer for forming the temporary-adhesive layer and the glass transition temperature (Tg) of the (meth)acrylic copolymer for forming the mask material layer is 8° C. to 20° C.;
and
wherein an absolute value of a difference between the acid value of the (meth)acrylic copolymer for forming the temporary-adhesive layer and the acid value of the (meth)acrylic copolymer for forming the mask material layer is 1.0 to 10 mgKOH/g.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/144,489Filed 27 Sep 2018 · continuation
Priority: JP JP2016-07326231 Mar 2016
Published: US 2019/0109047 A111 Apr 2019
Granted: 6 Jul 2021
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10P 54/00
Cutting or separating of wafers, substrates or parts of devices
B23K 26/361
Removing material: for deburring or mechanical trimming
H10P 50/242
Of semiconductor materials: of Group IV materials
H10P 52/00
Grinding, lapping or polishing of wafers, substrates or parts of devices