Selective formation of metallic films on metallic surfaces
AssigneeASM International N.V.
InventorsSuvi P. Haukka, Antti Niskanen, Marko Tuominen
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Abstract
Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.
Claims18
A method for selectively depositing a film on a first metal surface of a substrate relative to a second dielectric surface of the substrate, the method comprising:
- cleaning the substrate;
- conducting a dielectric restoration step;
- and
- carrying out a plurality of deposition cycles at a temperature of less than 150° C., comprising:
- exposing the substrate to a first precursor comprising silicon to form a layer comprising silicon on the first metal surface;
- and
- exposing the substrate to a second precursor comprising a metal selected from Ta, Nb, Ti, and V,
- wherein a thin film is selectively deposited on the first metal surface relative to the second dielectric surface and the selectivity is greater than about 50%.
Dependencies are inferred from the claim text.