Method for substrate thinning
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Chao Mao, Chin-Chuan Chang, Szu-Wei Lu
Life of this patent
Estimating the term…
Abstract
A method for thinning a substrate is provided. The method includes at least the following steps. A substrate is disposed on a carrying surface of a chuck, where a first liquid supply unit surrounds the chuck to form a frame of the chuck, and an outlet of the first liquid supply unit is disposed aside the carrying surface of the chuck. A first liquid flows from a bottom of the frame to the outlet and discharges to fill a gap between the substrate and the carrying surface of the chuck. The substrate is thinned during the gap is filled.
Claims20
A manufacturing method for thinning a substrate, comprising:
- disposing a substrate on a carrying surface of a chuck, wherein a first liquid supply unit surrounds the chuck to form a frame of the chuck, and an outlet of the first liquid supply unit is disposed aside the carrying surface of the chuck;
- flowing a first liquid from a bottom of the frame to the outlet and discharging to fill a gap between the substrate and the carrying surface of the chuck;
- and
- thinning the substrate during the gap is filled.
A manufacturing method for thinning a semiconductor structure, comprising:
- forming a first insulating material on a carrier to encapsulate a first semiconductor die to form a first warped structure;
- and
- thinning the first insulating material of the first warped structure to accessibly reveal a first conductive feature of the first semiconductor die of the first warped structure, thinning the first insulating material comprising:
- disposing the first warped structure on a chuck, wherein a gap forms between the first warped structure and a carrying surface of the chuck;
- sealing the gap with a first liquid delivered by a first liquid supply unit from a bottom of the chuck;
- and
- grinding the first insulating material when the first liquid seals the gap.
A manufacturing method for thinning a semiconductor structure, comprising:
- disposing a semiconductor structure on a carrying surface of a chuck, wherein the semiconductor structure comprises a semiconductor die encapsulated by an insulating material, and a periphery of the semiconductor structure is spatially separated from the carrying surface of the chuck;
- discharging a first fluid upwardly from a bottom of the chuck to laterally seal the periphery of the semiconductor structure and the carrying surface, of the chuck;
- and
- removing a portion of the insulating material to accessibly reveal a conductive feature of the semiconductor die when the periphery of the semiconductor structure and the carrying surface of the chuck are sealed by the first fluid.
Dependencies are inferred from the claim text.