Semiconductor device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsByoungdeog Choi, Jangseop Kim
Life of this patent
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Abstract
A method of fabricating a semiconductor may include forming on a substrate a mold structure including a mold layer, a buffer layer, and a support layer, performing on the mold structure an anisotropic etching process to form a plurality of through holes in the mold structure, and forming a plurality of bottom electrodes in the through holes. The buffer layer has a nitrogen content amount that increases as approaching the support layer from the mold layer. The buffer layer has an oxygen content amount that increases as approaching the mold layer from the support layer.
Claims14
A method of fabricating a semiconductor device, the method comprising:
- forming, on a substrate, a mold structure including a mold layer, a buffer layer, and a support layer, the buffer layer including a lower portion adjacent to the mold layer, an upper portion adjacent to the support layer and a middle portion between the lower portion and upper portion with a nitrogen content of the middle portion of the buffer layer increasing in a direction approaching the upper portion and an oxygen content of the middle portion increasing in a direction approaching the lower portion such that the lower portion includes silicon oxide, the upper portion includes silicon nitride and the middle portion includes silicon oxynitride;
- performing an anisotropic etching process on the mold structure to form a plurality of through holes in the mold structure;
- forming a plurality of bottom electrodes in respective ones of the plurality of through holes;
- forming a dielectric layer conformally covering a top surface and a sidewall of each of the plurality of the bottom electrodes;
- and
- forming a top electrode covering the dielectric layer and filling spaces between the plurality of the bottom electrodes.
A method of fabricating a semiconductor device, the method comprising:
- forming a mold layer on a substrate;
- forming a buffer layer on the mold layer, the buffer layer including a lower portion adjacent to the mold layer, an upper portion adjacent to a support layer and a middle portion between the lower portion and upper portion, the buffer layer being formed using a first gas and a second gas by gradually decreasing an amount of the first gas and gradually increasing an amount of the second gas, the first gas including oxygen and the second gas including nitrogen such that the lower portion includes silicon oxide, the upper portion includes silicon nitride and the middle portion includes silicon oxynitride
- forming the support layer on the buffer layer;
- forming a through hole by performing an anisotropic etching process to sequentially anisotropically etch the support layer, the buffer layer, and the mold layer;
- forming a bottom electrode in the through hole;
- forming a dielectric layer conformally covering a top surface and a sidewall of the bottom electrode;
- and
- forming a top electrode covering the dielectric layer.
Dependencies are inferred from the claim text.