Method and structure for wet etch utilizing etch protection layer comprising boron and carbon
AssigneeASM IP Holding B.V.
InventorsDieter Pierreux, Werner Knaepen, Bert Jongbloed
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Abstract
The disclosure relates generally to the field of processing substrates, for example comprising materials such as quartz, glass or silicon. The disclosure more particular relates to providing wet etch protection layers comprising boron and carbon and etching the substrate in a hydrogen fluoride aqueous solution. One or more of the boron and carbon containing films can have a thickness of at least 5, preferably 10 and, more preferably 30 nm. The method comprises wet etching the substrate in a hydrofluoric acid solution with a hydrogen fluoride concentration of at least 10 wt. % for at least 5 minutes.
Claims17
A method for processing a substrate comprising:
- heating the substrate to a temperature of between 200 and 450° C.;
- contacting the heated substrate in a reaction space with a vapor phase boron precursor to form a boron and carbon-comprising diffusion barrier and wet etch protection layer with a thickness of greater than 5 nm on the substrate;
- and
- wet etching the substrate in a hydrofluoric acid solution with a hydrogen fluoride concentration of at least 10 wt. % for at least 5 minutes while protecting at least a portion of the substrate with the boron and carbon-comprising etch protection layer, wherein the boron and carbon-comprising diffusion barrier and wet etch protection layer protects the substrate from diffusion of the hydrofluoric acid solution during wet etching.
A device manufacturing method comprising:
- providing a substrate in a reaction space;
- heating the substrate to a temperature between 200 and 450° C.;
- forming a boron and carbon-comprising diffusion barrier and wet etch protection layer on the substrate, the wet etch protection layer having a thickness of greater than 5 nm, wherein forming the boron and carbon-comprising wet etch protection layer comprises contacting the heated substrate with a vapor phase boron precursor;
- and
- wet etching the substrate in a hydrofluoric acid solution with a hydrogen fluoride concentration of at least 10 wt. % for at least 5 minutes while protecting at least a portion of the substrate with the boron and carbon-comprising etch protection layer, wherein the boron and carbon-comprising wet etch protection layer is a diffusion barrier protecting the substrate from diffusion of the hydrofluoric acid solution over the at least 5 minutes.
Dependencies are inferred from the claim text.