Magnetic slurry for highly efficient CMP
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Ting Chen, Chun-Hao Kung, Tung-Kai Chen, Hui-Chi Huang, Kei-Wei Chen
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Abstract
A chemical-mechanical polishing (CMP) system includes a head, a polishing pad, and a magnetic system. The slurry used in the CMP process contains magnetizable abrasives. Application and control of a magnetic field, by the magnetic system, allows precise control over how the magnetizable abrasives in the slurry may be drawn toward the wafer or toward the polishing pad.
Claims20
A chemical-mechanical polishing (CMP) system, comprising:
- a head;
- a polishing pad;
- a first magnet disposed over the polishing pad, the first magnet configured to apply a first magnetic field to a slurry disposed over the polishing pad, and the slurry comprising magnetizable abrasives;
- a second magnet disposed below the polishing pad, the second magnet being directly below the head;
- and
- a third magnet disposed below the polishing pad, the third magnet being laterally displaced from the second magnet and the head.
A chemical-mechanical polishing (CMP) system, comprising:
- a magnetic system comprising:
- a plurality of tracks forming a pattern, each of the plurality of tracks extending radially outward from a center region of the pattern to an edge region of the pattern;
- and
- a plurality of magnets, each magnet being disposed movably along a respective one of the plurality of tracks.
A chemical-mechanical polishing (CMP) system, comprising:
- a first magnetic system, the first magnetic system comprising:
- a plurality of tracks;
- and
- a plurality of magnets, each of the plurality of magnets attached along one of the plurality of tracks, each of the plurality of magnets being configured to move along a corresponding one of the plurality of tracks;
- a polishing head disposed over the first magnetic system, the polishing head configured to hold a wafer;
- and
- a polishing pad disposed over the first magnetic system and below the polishing head, movement of each of the plurality of magnets being in relation to the polishing pad, the movement being directly below and parallel to a flat surface of the polishing pad.
Dependencies are inferred from the claim text.