Method of fabricating semiconductor device, vacuum processing apparatus and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsKoichi Yatsuda, Takashi Hayakawa, Hiroshi Okuno, Reiji Niino, Hiroyuki Hashimoto, Tatsuya Yamaguchi
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Abstract
There is provided a method of fabricating a semiconductor device by performing a process on a substrate, which includes: forming a masking film made of a polymer having a urea bond by supplying polymerizing raw materials to a surface of the substrate on which an etching target film formed; forming an etching pattern on the masking film; subsequently, etching the etching target film with a processing gas using the etching pattern; and subsequently, removing the masking film by heating the substrate to depolymerize the polymer.
Claims4
A method of fabricating a semiconductor device by performing a process on a substrate, comprising:
- forming a masking film made of a polymer having a urea bond by supplying an isocyanate and an amine which are polymerizing raw materials to a surface of the substrate on which an etching target film formed;
- forming an etching pattern on the masking film;
- subsequently, etching the etching target film with a processing gas using the etching pattern;
- and
- subsequently, removing the masking film by heating the substrate to depolymerize the polymer,
- wherein the isocyanate is a monofunctional molecule having only one isocyanate group or the amine is a monofunctional molecule having only one amine group.
Dependencies are inferred from the claim text.