Method for manufacturing semiconductor device
AssigneeASM IP Holding B.V.
InventorAtsuki Fukazawa
Life of this patent
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Abstract
Examples of a method for manufacturing a semiconductor device include forming an initial film having a film thickness of 1 to 3 nm made of a metal or a metal nitride by applying plasma film formation with plasma power of 0.07 to 0.30 W/cm2 and an RF pulse width within a range of 0.1 to 1 sec, and forming, after forming the initial film, a bulk film made of a metal or metal nitride on the initial film by applying plasma film formation with plasma power higher than the plasma power when the initial film is formed.
Claims18
A method for manufacturing a semiconductor device, the method comprising:
- forming an initial film having a film thickness of 1 to 3 nm comprising a metal or a metal nitride by applying plasma film formation with plasma power of 0.07 to 0.30 W/cm2 and an RF pulse width within a range of 0.1 to 1 seconds, wherein the initial film is formed on a substrate and wherein SiO is provided on a surface of the substrate and the initial film is formed on the SiO;
- forming, after forming the initial film, a bulk film comprising a metal or a metal nitride on the initial film by applying plasma film formation with plasma power higher than the plasma power used during said forming the initial film;
- and
- forming an insulating film on the bulk film.
A method for manufacturing a semiconductor device comprising forming a laminated structure by forming a plurality of films, wherein individual ones of the plurality of films having have a film thickness of 1 to 10 nm on a substrate using a pulse CVD method or PEALD method such that each film is in contact with another film of a different kind, wherein
- the plurality of films forming the laminated structure are metals or metal nitrides, and wherein the plurality of films includes at least three films.
Dependencies are inferred from the claim text.