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US 11,056,344 B2Granted
Layer forming method
AssigneeASM IP Holding B.V.
InventorsChiyu Zhu, Kiran Shrestha, Qi Xie
Life of this patent
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Abstract
There is provided a method of forming a layer, comprising depositing a seed layer on the substrate and depositing a bulk layer on the seed layer. Depositing the seed layer comprises supplying a first precursor comprising metal and halogen atoms to the substrate; and supplying a first reactant to the substrate. Depositing the bulk layer comprises supplying a second precursor comprising metal and halogen atoms to the seed layer and supplying a second reactant to the seed layer.
Claims20
A method of forming a layer, comprising:
- providing a substrate with gaps created during manufacturing of a feature;
- depositing a seed layer on the substrate;
- and
- depositing a bulk layer directly after the step of depositing the seed layer,
- wherein depositing the seed layer comprises:
- supplying a first precursor comprising metal and halogen atoms to the substrate;
- and
- after stopping the supply of the first precursor to the substrate, supplying a first reactant to the substrate, wherein a portion of the first precursor and the first reactant react to form at least a portion of the seed layer;
- wherein depositing the bulk layer comprises:
- supplying a second precursor comprising metal and halogen atoms to the seed layer;
- and,
- after stopping the supply of the second precursor to the seed layer, supplying a second reactant to the seed layer, wherein the second precursor and the second reactant react to form the bulk layer on the seed layer;
- wherein the first and second precursor are different;
- wherein the first precursor and the second precursor comprise the same metal atom;
- and
- wherein at least one of the first and second reactants comprises a silane.
13 more elements
Dependencies are inferred from the claim text.