Method for silicidation of semiconductor device, and corresponding semiconductor device
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsDenis Monnier, Olivier Gonnard
Life of this patent
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Abstract
A method of fabricating a semiconductor device includes forming a protective layer on a portion of the semiconductor body that is not to be silicided. The protective layer includes a silicon oxide layer and a silicon nitride layer over the silicon oxide layer. At least a portion of the silicon nitride layer of the protective layer is removed. A silicided portion of the semiconductor body is laterally spaced from the protective layer. The siliciding is performed by an ion sputtering in a plasma environment on both the silicided portion of the semiconductor body and the portion of the semiconductor body that is not to be silicided.
Claims20
A method of fabricating a semiconductor device, the method comprising:
- forming a protective layer over a portion of a semiconductor body that is not to be silicided, the semiconductor body also including a portion to be silicided, the portion of the semiconductor body to be silicided being laterally spaced from the protective layer, wherein the protective layer comprises a silicon oxide layer and a silicon nitride layer over the silicon oxide layer;
- removing, from directly over the portion of the semiconductor body that is not to be silicided, at least a portion of the silicon nitride layer of the protective layer to expose at least a portion of the silicon oxide layer;
- performing an ion sputtering in a plasma environment on both the portion of the semiconductor body to be silicided and the portion of the semiconductor body that is not to be silicided;
- and
- after performing the ion sputtering, siliciding the portion of the semiconductor body to be silicided.
A method of fabricating a semiconductor device at a surface of a semiconductor body, the method comprising:
- forming an oxide layer over a semiconductor body;
- forming a nitride layer over the oxide layer;
- removing a first portion of nitride layer and a portion of the oxide layer from over a portion of the semiconductor body that is to be silicided;
- removing a second portion of the nitride layer from over a portion of the semiconductor body that is not to be silicided;
- performing an ion sputtering step on exposed semiconductor portions of the semiconductor body, a remaining portion of the oxide layer and a remaining portion, if any, of the nitride layer;
- and
- siliciding the exposed semiconductor portions of the semiconductor body.
A method of fabricating a semiconductor device at a surface of a semiconductor body, the method comprising:
- forming a first blanket layer comprising an oxide over a semiconductor body;
- forming a second blanket layer comprising a nitride over the first blanket layer;
- forming a first mask using a first lithographic process over a first portion of the semiconductor body that is not to be silicided;
- using the first mask as an etch mask, removing a first portion of second blanket layer over a second portion of the semiconductor body that is to be silicided;
- removing a first portion of the first blanket layer from over the second portion of the semiconductor body;
- forming a second mask using a second lithographic process over the second portion of the semiconductor body, the second mask extending over a region of the first portion of the semiconductor body;
- using the second mask as an etch mask, removing a second portion of the second blanket layer from over the first portion of the semiconductor body leaving a third portion of the second blanket layer over the region of the first portion of the semiconductor body;
- exposing the semiconductor body to an ion sputtering process after removing the second mask to expose a semiconductor surface on the second portion of the semiconductor body;
- and
- siliciding the semiconductor surface.
Dependencies are inferred from the claim text.