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US 11,056,338 B2Granted
Method for printing wide bandgap semiconductor materials
AssigneeThe Johns Hopkins University
InventorJarod C. Gagnon
Life of this patent
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Abstract
A method for printing a semiconductor material includes depositing a molten metal onto a substrate in an enclosed chamber to form a trace having a maximum height of 15 micrometers, a maximum width of 25 micrometers to 10 millimeters, and/or a thin film having a maximum height of 15 micrometers. The method further includes reacting the molten metal with a gas phase species in the enclosed chamber to form the semiconductor material.
Claims20
A method for forming a semiconductor material, comprising:
- depositing a molten metal onto a substrate in an enclosed chamber to form a trace of the molten metal having at least one of a maximum height of 15 micrometers or a maximum width of 25 micrometers to 10 millimeters;
- wherein the depositing comprises translating at least one of the injection orifice or the substrate in an x-y plane while depositing the molten metal from the injection orifice onto the substrate;
- or depositing the molten metal onto the substrate in the enclosed chamber to form a thin film of the molten metal having a maximum height of 15 micrometers;
- and
- reacting the molten metal with a gas phase species in the enclosed chamber to form the semiconductor material;
- wherein a crystallization rate of the molten metal to form the semiconductor material is 0.035 to 3 micrometers per minute.
3 more elements
A method for forming a semiconductor material, comprising:
- depositing a molten metal onto a substrate in an enclosed chamber to form a trace of the molten metal having at least one of a maximum height of 15 micrometers or a maximum width of 25 micrometers to 10 millimeters;
- wherein the depositing comprises translating at least one of the injection orifice or the substrate in an x-y plane while depositing the molten metal from the injection orifice onto the substrate;
- or depositing the molten metal onto the substrate in the enclosed chamber such that is forms a thin film of the molten metal having a maximum height of 15 micrometers;
- and
- reacting the molten metal with a gas phase species in the enclosed chamber to form the semiconductor material;
- and
- depositing a second molten metal onto the semiconductor material and allowing the second molten metal to react with the gas phase species in the enclosed chamber to form the semiconductor material having an increased height.
4 more elements
Dependencies are inferred from the claim text.