Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A substrate processing apparatus, comprising:

• a process chamber in which a substrate is processed;
• a reactant supply system configured to supply a first reactant containing N and H and a second reactant containing N and H to the substrate in the process chamber;
• a precursor supply system configured to supply SiCl4 as a precursor to the substrate in the process chamber;
• a heater configured to heat the substrate in the process chamber;
• and
• a controller configured to control the reactant supply system, the precursor supply system, and the heater so as to perform a process in the process chamber, the process comprising:
• (a) forming NH termination on a surface of the substrate by supplying the first reactant to the substrate;
• (b) forming a first Si- and N-containing layer having SiCl termination formed on its surface by supplying the SiCl4 to the substrate to react the NH termination formed on the surface of the substrate with the SiCl4;
• (c) forming a second Si- and N-containing layer having NH termination formed on its surface by supplying the second reactant to the substrate to react the SiCl termination formed on the surface of the first Si- and N-containing layer with the second reactant;
• and
• (d) forming a Si- and N-containing film on the substrate by performing a cycle a predetermined number of times under a condition in which no gas-phase reaction occurs after performing (a), the cycle including non-simultaneously performing (b) and (c).

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process in a process chamber of the substrate processing apparatus, the process comprising:

• (a) forming NH termination on a surface of a substrate by supplying a first reactant containing N and H to the substrate;
• (b) forming a first Si- and N-containing layer having SiCl termination formed on its surface by supplying SiCl4 as a precursor to the substrate to react the NH termination formed on the surface of the substrate with the SiCl4;
• (c) forming a second Si- and N-containing layer having NH termination formed on its surface by supplying a second reactant containing N and H to the substrate to react the SiCl termination formed on the surface of the first Si- and N-containing layer with the second reactant;
• and
• (d) forming a Si- and N-containing film on the substrate by performing a cycle a predetermined number of times under a condition in which no gas-phase reaction occurs after performing (a), the cycle including non-simultaneously performing (b) and (c).