Microwave plasma source, microwave plasma processing apparatus and plasma processing method
AssigneeTokyo Electron Limited
InventorYasuaki Taniike
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Electron Limited
InventorYasuaki Taniike
Estimating the term…
A microwave plasma source that generates a microwave plasma in a processing space in which a target substrate is processed, includes: a microwave generation part for generating microwave; a waveguide through which the microwave generated by the microwave generation part propagates; an antenna part including a slot antenna having a predetermined pattern of slots formed therein and being configured to radiate the microwave propagating through the waveguide into the processing space and a microwave-transmitting plate being made of a dielectric material and being configured to transmit the microwave radiated from the slots therethrough and supply the microwave into the processing space; a temperature detector for detecting a temperature at a predetermined position in a microwave propagation path leading to the slot antenna; and an abnormality detection part for receiving the temperature detected by the temperature detector and detect an abnormality in the microwave propagation path based on the detected temperature.
A microwave plasma source that generates a microwave plasma in a processing space in which a target substrate is processed, comprising:
A microwave plasma processing apparatus comprising:
Dependencies are inferred from the claim text.