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US 11,056,309 B2Granted
Method and device for implanting ions in wafers
AssigneeMi2-Factory GmbH
InventorsFlorian Krippendorf, Constantin Csato
Life of this patent
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Abstract
A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter, the ion beam being electrostatically deviated in a first direction and a second direction in order to move the ion beam over the wafer, and the implantation filter being moved in the second direction to match the movement of the ion beam.
Claims9
A device comprising:
- a wafer chamber, which comprises a wafer holder, which is configured to hold at least one wafer, and
- a filter chamber, which comprises a filter holder and first and second closable openings.
Dependencies are inferred from the claim text.