Updating corrective read voltage offsets in non-volatile random access memory

A computer program product comprising a computer readable storage medium having program instructions embodied therewith, the program instructions readable and/or executable by a processor to cause the processor to, for pages in a block of memory:

• use, by the processor, a first calibration scheme to calibrate a given page in the block, wherein the first calibration scheme is configured to calibrate a first number of independent read voltage offset values and a first number of common read voltage offset values for pages in a block of memory;
• in response to determining that an error correction code failure occurred when attempting to read the calibrated given page, use, by the processor, a second calibration scheme to recalibrate the given page in the block, wherein the second calibration scheme is configured to calibrate a second number of independent read voltage offset values and a second number of common read voltage offset values for pages in a block of memory;
• and
• in response to determining that an error correction code failure occurred when attempting to read the recalibrated given page, send, by the processor, one or more instructions to relocate data stored in the given page.

A system, comprising:

• a plurality of non-volatile random access memory (NVRAM) blocks configured to store data;
• a processor;
• and
• logic integrated with and/or executable by the processor, the logic being configured to, for pages in one of the blocks:
• use, by the processor, a first calibration scheme to calibrate a given page in the block, wherein the first calibration scheme is configured to calibrate a first number of independent read voltage offset values and a first number of common read voltages for pages in a block of memory;
• in response to determining that an error correction code failure occurred when attempting to read the calibrated given page, use, by the processor, a second calibration scheme to recalibrate the given page in the block, wherein the second calibration scheme is configured to calibrate a second number of independent read voltage offset values and a second number of common read voltages for pages in a block of memory;
• and
• in response to determining that an error correction code failure occurred when attempting to read the recalibrated given page, send, by the processor, one or more instructions to relocate data stored in the given page.