Methods of enhancing speed of reading data from memory device
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsKe Liang, Li Xiang
Life of this patent
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Abstract
A memory device includes N rows of memory cells and N word lines coupled thereto, respectively. A method of reading data from the memory device includes: applying a first pre-pulse voltage to an nth word line while applying a second pre-pulse voltage to an adjacent word line adjacent to the nth word line, the second pre-pulse voltage exceeding the first pre-pulse voltage, and n being an integer ranging from 1 to N; grounding the nth word line while maintaining the second pre-pulse voltage on the adjacent word line; pulling a voltage on the nth word line towards a start read level; and prior to the voltage on the nth word line reaching the start read level, driving a voltage on the adjacent word line to the first pre-pulse voltage.
Claims16
A method of reading data from a memory device, the memory device comprising N rows of memory cells and N word lines coupled thereto, respectively, the method comprising:
- driving an nth word line towards a first pre-pulse voltage while driving an adjacent word line adjacent to the nth word line towards a second pre-pulse voltage, the second pre-pulse voltage exceeding the first pre-pulse voltage, and n being an integer ranging from 1 to N;
- pulling the nth word line from the first pre-pulse voltage to a ground voltage while maintaining the second pre-pulse voltage on the adjacent word line;
- pulling a voltage on the nth word line from the ground voltage to a start read level;
- and
- prior to the voltage on the nth word line reaching the start read level, starting to drive the adjacent word line from the second pre-pulse voltage to the first pre-pulse voltage.
A method of reading data from a memory device, the memory device comprising N rows of memory cells and N word lines coupled thereto, respectively, the method comprising:
- driving an nth word line towards a first pre-pulse voltage while driving an adjacent word line adjacent to the nth word line towards a second pre-pulse voltage, the second pre-pulse voltage exceeding the first pre-pulse voltage, and n being an integer ranging from 1 to N;
- pulling the nth word line from the first pre-pulse voltage to a ground voltage while maintaining the second pre-pulse voltage on the adjacent word line;
- and
- floating the adjacent word line while pulling a voltage on the nth word line from the ground voltage to a start read level.
Dependencies are inferred from the claim text.