Nonvolatile memory device having different DQ lines receiving DQ line codes and method of operating nonvolatile memory device using different threshold voltages or error margins

A nonvolatile memory device comprising:

• a first memory cell connected to a first word line and a first bit line;
• a second memory cell connected to the first word line and a second bit line;
• an input/output circuit configured to output a first data bit, corresponding to a first DQ signal received on a first DQ line from an external device, through a first data line and to output a second data bit, corresponding to a first DQ signal received on a second DQ line from the external device, through a second data line;
• a first page buffer connected to the first bit line and the first data line, and configured to store a first latch value, based on the first data bit received through the first data line and a first DQ line code for the first DQ line;
• and
• a second page buffer connected to the second bit line and the second data line, and configured to store a second latch value, based on the second data bit received through the second data line and a second DQ line code for the second DQ line.

An operation method of a nonvolatile memory device, the method comprising:

• receiving a first DQ signal representing first data from an external device through a first DQ line and receiving a second DQ signal representing second data from the external device through a second DQ line;
• and
• programming a plurality of first memory cells corresponding to the first DQ line respectively based on the first data and programming a plurality of second memory cells corresponding to the second DQ line respectively based on the second data,
• wherein an error margin of the plurality of programmed second memory cells is greater than an error margin of the plurality of programmed first memory cells, and
• wherein the plurality of first memory cells and the plurality of second memory cells are connected to the same word line.