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US 11,056,189 B2Granted
Resistance variable memory sensing using programming signals
AssigneeMicron Technology, Inc.
InventorFerdinando Bedeschi
Life of this patent
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Abstract
Apparatuses and methods for sensing a resistance variable memory cell include circuitry to apply a programming signal to a memory cell in the array, the programming signal associated with programming resistance variable memory cells to a particular data state, and detect a change in resistance of the memory cell to determine if a data state of the memory cell changes from an initial data state to a different data state during application of the programming signal.
Claims20
An apparatus, comprising:
- an array of resistance variable memory cells;
- and
- circuitry coupled to the array and configured to:
- apply a programming signal to a memory cell in the array, the programming signal associated with programming resistance variable memory cells to a particular data state;
- and
- detect a change in resistance of the memory cell to determine if a data state of the memory cell changes from an initial data state to a different data state during application of the programming signal by sensing a characteristic of a first signal on a bit line coupled to the memory cell generated during a first time period while and in response to applying the programming signal to the memory cell and sensing a characteristic of a second signal on the bit line coupled to the memory cell generated during a second time period while and in response to applying the programming signal to the memory cell, wherein the programming signal is applied continuously to the memory cell during the first time period and the second time period.
3 more elements
An apparatus, comprising:
- an array of resistance variable memory cells;
- and
- circuitry, coupled to the array, that includes a first number of inverters and second number of inverters to determine a data state of a memory cell by detecting a change in resistance of the memory cell when a programming signal is applied to the memory cell by sensing a characteristic of a signal on a bit line coupled to the memory cell generated while and in response to applying the programming signal to the memory cell, wherein the programming signal is applied continuously to the memory cell until at least one of the first number of inverter or at least of the second number of inverters pass the signal.
A method, comprising:
- applying a programming signal to a memory cell in an array via a word line coupled to the memory cell;
- and
- determining a data state of the memory cell by comparing a characteristic of a first signal on a bit line coupled the memory cell generated during a first time period while and in response to applying the programming signal to a characteristic of a second signal on the bit line of the memory cell generated during a second time period while and in response to applying the programming signal, wherein the programming signal is applied continuously to the memory cell during the first time period and the second time period.
Dependencies are inferred from the claim text.