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US 11,056,186 B2Granted
Apparatuses and methods for sensing a phase change test cell and determining changes to the test cell resistance due to thermal exposure
AssigneeMicron Technology, Inc.
InventorsJason Brand, Jason Snodgress
Life of this patent
Estimating the term…
Abstract
A phase change memory array may include at least one cell used to determine whether the array has been altered by thermal exposure over time. The cell may be the same or different from the other cells. In some embodiments, the cell is only read in response to an event. If, in response to that reading, it is determined that the cell has changed state or resistance, it may deduce whether the change is a result of thermal exposure. Corrective measures may then be taken.
Claims13
A method, comprising:
- Measuring a respective resistance of selected phase change memory cells of a phase change memory array;
- Determining, based on the measured respective resistance of the selected phase change memory cells, which of the selected phase change memory cells have experienced a reduction in resistance by at least a predetermined magnitude below a respective initial resistance;
- and
- Refreshing the phase change memory array in response to a number of the selected phase change memory cells determined to have experienced the reduction in resistance by at least the predetermined magnitude below the respective initial resistance exceeds a predetermined number of memory cells.
1 more element
A method, comprising:
- measuring a respective characteristic of a selected subset of phase change memory cells of a phase change memory array;
- determining, based on the measured respective characteristic of each of the selected phase change memory cells, which of the selected subset of phase change memory cells have experienced a change in the respective characteristic by at least a predetermined magnitude from a respective initial value of the respective characteristic;
- and
- refreshing the phase change memory array in response to a number of the selected subset of phase change memory cells determined to have experienced the change in the respective characteristic by at least the predetermined magnitude from the respective initial value of the respective characteristic exceeds a predetermined number of memory cells.
1 more element
A method comprising:
- Measuring a respective resistance of selected phase change memory cells of a phase change memory array;
- determining, for each of the selected phase change memory cells, whether the respective resistance has been reduced from a respective initial resistance by more than a predetermined magnitude;
- and
- determining whether a number of the selected phase change memory cells determined to have experienced a reduction in the respective resistance from the respective initial resistance by more than the predetermined magnitude exceeds a predetermined number of memory cells.
1 more element
Dependencies are inferred from the claim text.