Static memory based on components with current-voltage hysteresis characteristics

A cell circuit of a static memory based on a component with current-voltage hysteresis characteristic, comprising:

• a data storage module, wherein the data storage module consists of the component with the current-voltage hysteresis characteristic and is configured to store data information using the current-voltage hysteresis characteristic, the data storage module comprises a write operation port and a read operation port, and the data information stored in the data storage module may change without external energy input;
• a write operation module, wherein the write operation module is coupled to the write operation port and is configured to perform write operation on the data information stored in the data storage module, and to ensure the data information stored in the data storage module is unchanged by continuously controlling the write operation port while not changing the data information stored in the data storage module, in which the write operation module does not need to obtain the data information stored in the data storage module in advance for controlling the data information stored in the unchanged data storage module;
• and
• a read operation module, coupled to the read operation port and configured to perform read operation on the information stored in the data storage module.