Performing a refresh operation based on a characteristic of a memory sub-system
AssigneeMicron Technology, Inc.
InventorsTingjun Xie, Seungjune Jeon, Zhengang Chen, Zhenlei Shen, Charles See Yeung Kwong
Life of this patent
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Abstract
A refresh operation can be performed at a memory sub-system The refresh operation can performed at a current frequency. A write count associated with the memory sub-system can be received. A determination can be made as to whether the write count associated with the memory sub-system satisfies a write count threshold. In response to determining that the write count associated with the memory sub-system satisfies the write count threshold, the refresh operation can be performed at an increased frequency relative to the current frequency.
Claims20
A method comprising:
- performing a refresh operation at a memory sub-system, the refresh operation being performed at a current frequency;
- receiving a write count associated with the memory sub-system;
- determining, by a processing device, whether the write count associated with the memory sub-system satisfies a write count threshold;
- and
- in response to determining that the write count associated with the memory sub-system satisfies the write count threshold, performing the refresh operation at an increased frequency relative to the current frequency.
A non-transitory computer readable medium comprising instructions, which when executed by a processing device, cause the processing device to perform operations comprising:
- performing a refresh operation at a memory sub-system, the refresh operation being performed at a current frequency and associated with a change of threshold voltage distributions at the memory sub-system;
- receiving a write count associated with the memory sub-system;
- determining whether the write count associated with the memory sub-system satisfies a write count threshold;
- and
- in response to determining that the write count associated with the memory sub-system satisfies the write count threshold, performing the refresh operation at an increased frequency relative to the current frequency to change the threshold voltage distributions at the memory sub-system.
A system comprising:
- a memory component;
- and
- a processing device, operatively coupled with the memory component, to:
- perform a refresh operation at a memory sub-system, the refresh operation being performed at a current frequency;
- receive an error condition associated with the memory sub-system, the error condition corresponding to at least one of a bit error rate or a read-retry trigger rate;
- determine whether the error condition associated with the memory sub-system satisfies an error condition threshold;
- and
- in response to determining that the error condition associated with the memory sub-system satisfies the error condition threshold, perform the refresh operation at a different frequency relative to the current frequency.
Dependencies are inferred from the claim text.