Memory device and method of operating the same
AssigneeSK hynix Inc.
InventorsMi Sun Yoon, Dong Hyuk Chae
Life of this patent
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AssigneeSK hynix Inc.
InventorsMi Sun Yoon, Dong Hyuk Chae
Estimating the term…
Provided herein is a memory device and a method of operating the same. The memory device may include a memory cell array including a plurality of memory cells, page buffers coupled to the memory cell array through respective bit lines and a control logic configured to control so that, during a read operation, data stored in the memory cell array is sensed and stored in the page buffers, and the data stored in the page buffers is output to an external device, wherein the control logic controls a time point at which a discharge operation is to be performed after the sensing of the data, and a time point at which a data transfer operation between latches included in each of the page buffers is to be performed, in response to a read command received from the external device.
A memory device, comprising:
A method of operating a memory device, the memory device including a memory cell array including a plurality of memory cells and page buffers coupled to the memory cell array through respective bit lines, the method comprising:
A memory device comprising:
Dependencies are inferred from the claim text.