Third alternative design for magnetic recording assisted by one or two spin hall effect (SHE) layers in the write gap

A Spin Hall Effect (SHE) assisted magnetic recording (SHAMR) structure, comprising:

• (a) a main pole (MP) having a MP tip with a front side at an air bearing surface (ABS), and with a local magnetization that is proximate to a MP trailing side and substantially in a direction of a write gap (WG) flux field between the MP tip and a trailing shield and across a WG;
• (b) the trailing shield (TS) with a front side at the ABS, and a local magnetization proximate to a bottom surface that faces the MP trailing side, and substantially in a direction of the WG flux field;
• (c) a Spin Hall Effect layer (SHE2) formed in the WG, and comprised of a positive Spin Hall Angle (SHA) material;
• and
• (d) a conductor layer made of a non-magnetic metal that contacts SHE2, and wherein the SHE2 is configured to generate a transverse spin transfer torque that tilts one of the local MP magnetization and local TS magnetization to a direction that enhances a MP write field and increases a TS return field, respectively, when a current (Ia) flows from a direct current (dc) source through a pathway comprised of a first lead to the conductor layer and then to SHE2 before returning to the dc source through a second lead.