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US 11,043,533 B2Granted
Switch and method for fabricating the same, and resistive memory cell and electronic device, including the same
AssigneeSK hynix Inc.
InventorsBeom Yong Kim, Soo Gil Kim
Life of this patent
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Abstract
A switch includes a first electrode layer, a second electrode layer disposed over the first electrode layer, and a selecting element layer interposed between the first electrode layer and the second electrode layer. The selecting element layer includes a gas region in which a current flows or does not flow according to a voltage applied to the switch. When the current flows, the switch is in an on-state, and, when the current does not flow, the switch is in an off-state.
Claims20
A method for fabricating a switch, the method comprising:
- forming a first electrode layer;
- forming a second electrode layer over the first electrode layer;
- and
- after forming the first electrode layer and the second electrode layer, implanting ions between the first electrode layer and the second electrode layer to form a gas region,
- wherein the ions are implanted through the second electrode layer,
- wherein the gas region is formed between a first surface of the first electrode layer and a second surface of the second electrode layer, the second surface faces the first surface, and one or both of the first surface and the second surface directly contact the gas region.
3 more elements
A method for fabricating a switch,
- the method comprising:
- forming a first electrode layer;
- forming an insulating layer over the first electrode layer;
- forming a second electrode layer over the insulating layer;
- and
- after forming the first electrode layer, the insulating layer, and the second electrode layer, implanting ions between the insulating layer and the second electrode layer to form a gas region,
- wherein the ions are implanted through the second electrode layer, and the gas region is formed at an interface between the insulating layer and the second electrode layer.
4 more elements
A method for fabricating a switch, the method comprising:
- forming a first electrode layer;
- forming a second electrode layer over the first electrode layer;
- and
- after forming the first electrode layer and the second electrode layer, forming a gas layer interposed between a first surface of the first electrode layer and a second surface of the second electrode layer,
- wherein the second surface faces the first surface, both of the first surface of the first electrode layer and the second surface of the second electrode layer directly contacting the gas layer.
2 more elements
Dependencies are inferred from the claim text.