Method of manufacturing a semiconductor device
AssigneeAblic Inc.
InventorsHitomi Sakurai, Masaru Akino
Life of this patent
Estimating the term…
Abstract
In a manufacturing step in which a structure of target of screening is formed on a semiconductor substrate in the middle of manufacturing process before a semiconductor device is finished, screening of potential defects of a gate insulating film is performed for each wafer at one time so that the semiconductor device is caused to appear as an initial defective product when the finished semiconductor device is subjected to an electrical characteristic test. Provided are a semiconductor device, and a method of manufacturing a semiconductor device which enables reliable screening of potential defects in a short period of time.
Claims4
A method of manufacturing a semiconductor device, the semiconductor device having a gate insulating film and a gate electrode film on a semiconductor substrate of a wafer, the method comprising:
- forming a first gate insulating film on the semiconductor substrate of the wafer;
- forming a first gate electrode film on an entire surface of the semiconductor substrate of the wafer, the semiconductor substrate of the wafer including the first gate insulating film;
- screening, after the forming a first gate electrode film, the first gate insulating film by generating a potential difference between the first gate electrode film which is formed on the entire surface of the semiconductor substrate of the wafer, and a back surface of the semiconductor substrate of the wafer to apply an electric field to the first gate insulating film;
- determining the semiconductor substrate of the wafer which has been subjected to the screening;
- patterning the first gate electrode film after the determining the semiconductor substrate;
- removing, after the patterning the first gate electrode film, the first gate insulating film which is formed on the entire surface of the semiconductor substrate of the wafer from at least a region in which a second gate insulating film is to be formed;
- forming, after removing the first gate insulating film, the second gate insulating film on the semiconductor substrate of the wafer;
- forming a second gate electrode film on the entire surface of the semiconductor substrate of the wafer, the semiconductor substrate of the wafer including the second gate insulating film;
- screening, after the forming a second gate electrode film, the second gate insulating film by generating a potential difference between the second gate electrode film which is formed on the entire surface of the semiconductor substrate of the wafer, and the back surface of the semiconductor substrate of the wafer to apply an electric field to the second gate insulating film;
- determining the semiconductor substrate of the wafer which has been subjected to the screening;
- and
- patterning the second gate electrode film after the determining the semiconductor substrate.
Dependencies are inferred from the claim text.