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US 11,043,382 B2Granted
Diamond semiconductor system and method
AssigneeAkhan Semiconductor, Inc.
InventorAdam Khan
Life of this patent
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Abstract
Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.
Claims10
A method of fabricating contacts on diamond semiconductors, the method including the steps of:
- introducing acceptor dopant atoms to a diamond material to form a plurality of pathways;
- introducing substitutional n-type donor atoms to the diamond material through the plurality of pathways to form a diamond semiconductor material;
- selecting a surface of the diamond semiconductor material;
- forming a carbide interface contact layer on the surface of the diamond semiconductor material;
- and
- forming a metal layer on the carbide interface contact layer.
3 more elements
A method of fabricating contacts on diamond semiconductors, the method including the steps of:
- selecting a diamond semiconductor material having a surface, the diamond semiconductor material having n-type donor atoms and a diamond lattice, wherein the n-type donor atoms are introduced through pathways created by acceptor dopant atoms;
- forming a carbide interface contact layer on the surface of the diamond semiconductor material;
- and
- forming a metal layer on the carbide interface contact layer.
1 more element
Dependencies are inferred from the claim text.