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US 11,031,239 B2Granted
Germanium nanosheets and methods of forming the same
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorHung-Hsiang Cheng
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Abstract
Devices comprising germanium nanosheets are described herein. Methods of forming such germanium nanosheets and devices including such germanium nanosheets are also described.
Claims20
A method, comprising:
- receiving a wafer comprising a stack of alternating semiconductor layers on a substrate, the stack of alternating semiconductor layers comprising alternating layers of a group IV semiconductor and layers of germanium, wherein the group IV semiconductor comprises Sn in a concentration ranging from about 20.3% to about 25.5%;
- shaping the stack of alternating semiconductor layers to have a first pad, a second pad, and a narrow portion between the first and second pads;
- forming a plurality of germanium nanosheets by removing the narrow portion of the layers of the group IV semiconductor, wherein a width of the plurality of germanium nanosheets closer to the substrate is wider than a width of the plurality of germanium nanosheets further from the substrate;
- and
- depositing a dielectric material that surrounds at least a portion of each of the plurality of germanium nanosheets.
2 more elements
A method, comprising:
- forming a stack comprising:
- a first layer of a group IV semiconductor on a substrate;
- a second layer of germanium on the first layer;
- a third layer of the group IV semiconductor on the second layer;
- and
- a fourth layer of germanium on the third layer, wherein the group IV semiconductor comprises Sn in a concentration ranging from about 20.3% to about 25.5%;
- and
- forming a first nanosheet and a second nanosheet by selectively wet etching portions of the first layer and the third layer to expose surfaces of the second layer and selectively wet etching a portion of the third layer to expose surfaces of the fourth layer, respectively.
5 more elements
A method, comprising:
- depositing a heterostructure on a substrate, the heterostructure comprising alternating layers of:
- (i) a group IV semiconductor comprising tin (Sn), and (ii) layers of germanium, wherein the group IV semiconductor is silicon-tin (SiSn), wherein the group IV semiconductor comprises Sn in a concentration ranging from about 20.3% to about 25.5%;
- shaping the heterostructure into a shape having a first pad, a second pad, and a narrow portion between the first and second pads;
- and
- forming a plurality of germanium nanosheets by removing the narrow portion of the layers of the group IV semiconductor.
2 more elements
Dependencies are inferred from the claim text.