# US 11,030,091 B2 · Semiconductor storage device for improved page reliability

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- Number: US 11,030,091 B2
- Document ID: US11030091B2
- Status: Granted
- Kind: B2
- Application number: 16/681,751
- Filed: 2019-11-12
- Published: 2020-07-30
- Granted: 2021-06-08
- Earliest claimed: 2019-01-29
- Assignees: Winbond Electronics Corp.
- Applicants: Winbond Electronics Corp.
- Inventors: Norio Hattori
- Web page: https://patentgrep.com/patent/US11030091B2

## CPC

- G06F 11/1441: {Resetting or repowering}
- G06F 12/0246: {in block erasable memory, e.g. flash memory}
- G06F 3/0619: {in relation to data integrity, e.g. data losses, bit errors}
- G06F 3/0688: {Non-volatile semiconductor memory arrays}
- G06F 2212/1032: Reliability improvement, data loss prevention, degraded operation etc
- G06F 2212/1056: Simplification
- G06F 2212/7201: Logical to physical mapping or translation of blocks or pages
- Y02D 10/00: Energy efficient computing, e.g. low power processors, power management or thermal management
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- Y02D: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE

## Abstract

A semiconductor storage device exhibiting improved programming reliability is provided. In the disclosure, flash memory includes a storage controller and a NAND type storage device. The storage controller includes a voltage detecting part, SRAM, RRAM, and a writer/selector. The voltage detecting part detects whether a power supply voltage drops to a fixed voltage. The SRAM stores a conversion table for converting a logical address into a physical address. The RRAM stores the logical address of a block and a page currently being programmed and conversion information for converting the logical address into another physical address when the fixed voltage is detected by the voltage detecting part during a programming process. The writer/selector converts the inputted logical address into the physical address according to the conversion table or the conversion information of the RRAM and programs data on the page of the block selected according to the converted physical address.

## Claims

### Claim 1

A semiconductor storage device, comprising:
a NAND type storage unit array, comprising a plurality of blocks;
a volatile memory, storing a conversion table configured for converting a logical address into a physical address;
a processor, configured to:
detect whether a power supply voltage drops to a fixed voltage; and
perform programming of data on a page of a block selected according to the physical address; and
a non-volatile memory, wherein the non-volatile memory stores a target logical address of the page of the block currently being programmed and conversion information configured for converting the target logical address into an other physical address when the fixed voltage is detected during a period when the programming is performed by the processor,
wherein the processor compares an inputted logical address with the target logical address, and the processor converts the inputted logical address into the physical address according to the conversion table of the volatile memory when the inputted logical address and the target logical address are not identical or converts the inputted logical address into the other physical address according to the conversion information of the non-volatile memory when the inputted logical address and the target logical address are identical.

### Claim 2 (depends on 1)

The semiconductor storage device as claimed in claim 1, wherein
the other physical address is configured to select an address of a dedicated block prepared for saving a page on which programming interruption occurs.

### Claim 3 (depends on 1)

The semiconductor storage device as claimed in claim 1, wherein
the other physical address comprises a block address configured for selecting a block and a page address configured for selecting a page.

### Claim 4 (depends on 1)

The semiconductor storage device as claimed in claim 1,
wherein the processor writes the conversion information into the non-volatile memory in response to the fixed voltage detected.

### Claim 5 (depends on 1)

The semiconductor storage device as claimed in claim 1, wherein
the fixed voltage is greater than a minimum voltage at which the semiconductor storage device can operate.

### Claim 6 (depends on 4)

The semiconductor storage device as claimed in claim 4, wherein
the processor writes the conversion information into the non-volatile memory before the power supply voltage is lost or before the semiconductor storage device in unable to operate.

### Claim 7 (depends on 1)

The semiconductor storage device as claimed in claim 1, wherein
the non-volatile memory is resistive memory.