# US 11,029,597 B2 · Method for producing pattern laminate, method for producing reversal pattern, and pattern laminate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,029,597 B2 - Document ID: US11029597B2 - Status: Granted - Kind: B2 - Application number: 16/112,003 - Filed: 2018-08-24 - Published: 2018-12-20 - Granted: 2021-06-08 - Earliest claimed: 2016-02-29 - Assignees: FUJIFILM Corporation - Applicants: FUJIFILM Corporation - Inventors: Yuichiro Goto; Kazuhiro Marumo - Web page: https://patentgrep.com/patent/US11029597B2 ## CPC - G03F 7/0002: {Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping} - B81C 1/0046: {using stamping, e.g. imprinting (nanoimprinting for making etch masks G03F7/0002)} - G03F 7/027: Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds (G03F7/075 takes precedence) - H10P 50/283: {by chemical means} - H10P 50/287: {by chemical means} - H10P 50/692: {characterised by their composition, e.g. multilayer masks or materials} - H10P 50/695: {characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask} - H10P 76/20: of masks comprising organic materials - B82Y 40/00: Manufacture or treatment of nanostructures - G03F 7/0752: {in non photosensitive layers or as additives, e.g. for dry lithography} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ## Abstract Provided are a method for producing a pattern laminate, the pattern laminate having a first layer having a pattern on an object to be processed and a second layer, which has a small waviness after etching (ΔLWR), in which the method includes a step of forming a first layer having a pattern on an object to be processed and a step of forming a second layer on the first layer, and the glass transition temperature of the first layer is 90° C. or higher; a method for producing a reversal pattern; and a pattern laminate. ## Claims ### Claim 1 A method for producing a pattern laminate, comprising: forming a first layer having a pattern on an object to be processed; and forming a second layer on the first layer, wherein the glass transition temperature of the first layer is 100° C. or higher, the forming of a first layer includes forming a first layer by an imprint method using a first curable composition comprising a polymerizable compound having an ethylenically unsaturated bond-containing group, a proportion of the polymerizable compound having an ethylenically unsaturated bond-containing group which includes an aliphatic ring having a crosslinked structure, with respect to all polymerizable compounds included in the first curable composition, is less than 15% by mass, a proportion of a polymerizable compound having two ethylenically unsaturated bond-containing groups with respect to all polymerizable compounds included in the first curable composition is 50% or more by mass, a proportion of a polymerizable compound having one ethylenically unsaturated bond-containing group with respect to all polymerizable compounds included in the first curable composition is 10 to 35% by mass, an Onishi parameter of the first curable composition is less than 3.8, the second layer includes a Si atom-containing compound or a metal, and the forming of a second layer includes forming a second layer by curing a second curable composition including a Si atom-containing compound in a case where the second layer includes the Si atom-containing compound. ### Claim 2 (depends on 1) The method for producing a pattern laminate according to claim 1, wherein the pattern laminate is used for a reversion process. ### Claim 3 (depends on 1) The method for producing a pattern laminate according to claim 1, further comprising heating the second layer, and wherein the second layer includes the Si atom-containing compound. ### Claim 4 (depends on 1) The method for producing a pattern laminate according to claim 1, wherein the Onishi parameter of the first curable composition is less than 3.5. ### Claim 5 (depends on 1) The method for producing a pattern laminate according to claim 1, wherein the viscosity of the first curable composition at 23° C. is less than 10 mPa·s. ### Claim 6 (depends on 1) The method for producing a pattern laminate according to claim 1, wherein the first layer has a pattern with a size of 100 nm or less. ### Claim 7 (depends on 1) The method for producing a pattern laminate according to claim 1, wherein an etching selectivity ratio of the first layer to the second layer is 1.2 to 10. ### Claim 8 (depends on 1) The method for producing a pattern laminate according to claim 1, wherein the second curable composition includes at least one compound selected from the group consisting of a crosslinking agent component and a curing accelerator component. ### Claim 9 (depends on 1) A method for producing a reversal pattern, comprising the method for producing a pattern laminate according to claim 1, the method comprising: making the second layer thin until a region having the pattern of the first layer exposed therein and a region having the first layer and the second layer laminated therein are formed; and forming a reversal pattern by selectively etching the region having the pattern of the first layer exposed therein. ### Claim 10 (depends on 9) The method for producing a reversal pattern according to claim 9, wherein the making the second layer thin is an etch-back step of etching the second layer.