# US 11,029,594 B2 · Optimization of a lithography apparatus or patterning process based on selected aberration > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,029,594 B2 - Document ID: US11029594B2 - Status: Granted - Kind: B2 - Application number: 16/332,075 - Filed: 2017-08-30 - Published: 2019-12-05 - Granted: 2021-06-08 - Earliest claimed: 2016-09-13 - Assignees: ASML Netherlands B.V. - Applicants: Asml Netherlands B.V. - Inventors: Steven George Hansen; Kateryna Stanislavovna Lyakhova; Paulus Jacobus Maria Van Adrichem - Web page: https://patentgrep.com/patent/US11029594B2 ## CPC - G03F 1/36: Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes - G03F 7/706: {Aberration measurement} - G03F 7/70125: {Use of illumination settings tailored to particular mask patterns (details of setting means G03F7/70091)} - G03F 7/705: {Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions} - G03F 7/70866: {of mask or workpiece} - G06F 17/10: Complex mathematical operations {(function generation by table look-up G06F1/03; evaluation of elementary functions by calculation G06F7/544)} - G06F 30/398: Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36) - G03F 7/70441: {Optical proximity correction [OPC]} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) ## Abstract A method including obtaining a selected component of optical aberration of or for a lithography apparatus, under a processing condition; computing an approximate of a cost function, based on the selected component; and producing an adjustment of the lithography apparatus or a patterning process that uses the lithography apparatus, based on the approximate of the cost function. ## Claims ### Claim 1 A method comprising: obtaining a selected component of optical aberration of or for a lithography apparatus, under a processing condition; computing, by a hardware computer system, an approximate of a cost function, based on the selected component of optical aberration; producing an adjustment for the lithography apparatus or a patterning process that uses the lithography apparatus, based on the approximate of the cost function; and outputting the adjustment, or data derived therefrom, for use in or with the lithography apparatus or the patterning process that uses the lithography apparatus, wherein the cost function is a function of a plurality of design variables that represent one or more characteristics of the patterning process, wherein: producing an adjustment of the lithography apparatus or the patterning process comprises producing an adjustment of one or more of the design variables until a certain termination condition is satisfied, and/or the selected component of optical aberration is among the design variables, and/or the selected component of optical aberration is a function of one or more of the design variables. ### Claim 2 (depends on 1) The method of claim 1, wherein the processing condition comprises one or more selected from: a condition of an illumination mode of the lithography apparatus, a condition of a patterning device used in the patterning process, and/or a condition of a projection system of the lithography apparatus. ### Claim 3 (depends on 1) The method of claim 1, further comprising obtaining the processing condition by optimizing the lithography apparatus or the patterning process without considering any optical aberration. ### Claim 4 (depends on 1) The method of claim 1, wherein the selected component of optical aberration is represented by a Zernike coefficient. ### Claim 5 (depends on 1) The method of claim 1, wherein obtaining the selected component of optical aberration is based on a sensitivity of a metric that the cost function represents, with respect to the selected component of optical aberration. ### Claim 6 (depends on 1) The method of claim 1, wherein the approximate of the cost function is computed based on the selected component of optical aberration but not the other components of the optical aberration. ### Claim 7 (depends on 1) The method of claim 1, wherein producing an adjustment of the lithography apparatus or the patterning process comprises optimizing the lithography apparatus or the patterning process. ### Claim 8 (depends on 1) The method of claim 1, wherein producing an adjustment of the lithography apparatus or the patterning process involves a new processing condition, and the method further comprises obtaining a new value of the selected component of optical aberration or a different selected component of optical aberration, under the new processing condition. ### Claim 9 (depends on 1) The method of claim 1, wherein the cost function represents a metric that characterizes a process window, and further comprising computing the metric, wherein computing the metric, comprises: for each of a plurality of offsets from nominal values of processing parameters that span the process window, determining a largest value of a pattern characteristic in a group of patterns, caused by that offset; and averaging the largest values caused by all the offsets. ### Claim 10 (depends on 1) The method of claim 1, wherein the cost function represents a metric relating to an image formed in the patterning process. ### Claim 11 (depends on 10) The method of claim 10, wherein the metric is one or more selected from: an edge placement error or a function thereof, a process window, a metric characterizing a process window, yield, a stochastic effect, presence or probability of a defect, and/or an interlayer characteristic. ### Claim 12 A method comprising: obtaining a selected component of optical aberration of or for a lithography apparatus, under a processing condition; computing, by a hardware computer system, an approximate of a cost function, based on the selected component of optical aberration; producing an adjustment for the lithography apparatus or a patterning process that uses the lithography apparatus, based on the approximate of the cost function; and outputting the adjustment, or data derived therefrom, for use in or with the lithography apparatus or the patterning process that uses the lithography apparatus, wherein computing the approximate of the cost function comprises computing an approximate of a metric the cost function represents, wherein computing the approximate of the metric comprises: for each of a plurality of selected components of optical aberration, determining a largest value of a pattern characteristic in a group of patterns, caused by that selected component; and averaging the largest values caused by all the selected components. ### Claim 13 (depends on 12) The method of claim 12, wherein the approximate of the metric is weighted with another metric and the weighting is adjusted during the computing. ### Claim 14 A computer program product comprising a non-transitory computer-readable medium having instructions therein, the instructions, when executed by a computer system, configured to cause the computer system to at least: obtain a selected component of optical aberration of or for a lithography apparatus, under a processing condition; compute an approximate of a cost function, based on the selected component of optical aberration; produce an adjustment for the lithography apparatus or a patterning process that uses the lithography apparatus, based on the approximate of the cost function; and output the adjustment, or data derived therefrom, for use in or with the lithography apparatus or the patterning process that uses the lithography apparatus wherein the cost function is a function of a plurality of design variables that represent one or more characteristics of the patterning process, wherein: producing an adjustment of the lithography apparatus or the patterning process comprises producing an adjustment of one or more of the design variables until a certain termination condition is satisfied, and/or the selected component of optical aberration is among the design variables, and/or the selected component of optical aberration is a function of one or more of the design variables. ### Claim 15 (depends on 14) The computer program product of claim 14, wherein the cost function represents a metric relating to an image formed in the patterning process. ### Claim 16 (depends on 14) The computer program product of claim 14, wherein the processing condition comprises one or more selected from: a condition of an illumination mode of the lithography apparatus, a condition of a patterning device used in the patterning process, and/or a condition of a projection system of the lithography apparatus. ### Claim 17 (depends on 14) The computer program product of claim 14, wherein the instructions are further configured to cause the computer system to obtain the processing condition by optimizing the lithography apparatus or the patterning process without considering any optical aberration. ### Claim 18 (depends on 14) The computer program product of claim 14, wherein production of an adjustment of the lithography apparatus or the patterning process involves a new processing condition, and the instructions are further configured to cause the computer system to obtain a new value of the selected component of optical aberration or a different selected component of optical aberration, under the new processing condition. ### Claim 19 (depends on 14) The computer program product of claim 14, wherein computation of the approximate of the cost function comprises computation of an approximate of a metric the cost function represents, wherein computation of the approximate of the metric comprises: for each of a plurality of selected components of optical aberration, determination of a largest value of a pattern characteristic in a group of patterns, caused by that selected component, and averaging of the largest values caused by all the selected components. ### Claim 20 (depends on 14) The computer program product of claim 14, wherein the cost function represents a metric that characterizes a process window, and the instructions are further configured to cause the computer system to compute the metric, wherein computation of the metric, comprises: for each of a plurality of offsets from nominal values of processing parameters that span the process window, determination of a largest value of a pattern characteristic in a group of patterns, caused by that offset; and averaging of the largest values caused by all the offsets. ### Claim 21 A computer program product comprising a non-transitory computer-readable medium having instructions therein, the instructions, when executed by a computer system, configured to cause the computer system to at least: obtain a selected component of optical aberration of or for a lithography apparatus, under a processing condition; compute an approximate of a cost function, based on the selected component of optical aberration; produce an adjustment for the lithography apparatus or a patterning process that uses the lithography apparatus, based on the approximate of the cost function; and output the adjustment, or data derived therefrom, for use in or with the lithography apparatus or the patterning process that uses the lithography apparatus, wherein computation of the approximate of the cost function comprises computation of an approximate of a metric the cost function represents, wherein computation of the approximate of the metric comprises: for each of a plurality of selected components of optical aberration, determination of a largest value of a pattern characteristic in a group of patterns, caused by that selected component; and averaging of the largest values caused by all the selected components.