# US 11,029,421 B2 · Fluorescent nitrogen-vacancy diamond sensing sheet, manufacturing method and uses thereof, sensor, and lithography apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,029,421 B2 - Document ID: US11029421B2 - Status: Granted - Kind: B2 - Application number: 16/557,268 - Filed: 2019-08-30 - Published: 2021-03-04 - Granted: 2021-06-08 - Earliest claimed: 2019-08-30 - Assignees: National Synchrotron Radiation Research Center; Academia Sinica - Applicants: National Synchrotron Radiation Research Center; Academia Sinica - Inventors: Bing-Ming Cheng; Hsiao-Chi Lu; Jen-Iu Lo; Huan-Cheng Chang - Web page: https://patentgrep.com/patent/US11029421B2 ## CPC - G01T 1/202: the detector being a crystal - G01T 1/2023: {Selection of materials} - C09K 11/65: containing carbon (in organic compounds C09K11/06) - G01J 1/429: {applied to measurement of ultraviolet light (using counting tubes G01T)} - G01J 1/58: using luminescence generated by light - H10F 30/10: the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors - H10F 77/45: Wavelength conversion means, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements - H10F 77/496: {Luminescent members, e.g. fluorescent sheets (wavelength conversion means for photovoltaic cells H10F77/45)} - Y02E 10/52: PV systems with concentrators - G01T: MEASUREMENT OF NUCLEAR OR X-RADIATION (radiation analysis of materials, mass spectrometry G01N23/00; tubes for determining the presence, intensity, density or energy of radiation or particles H01J47/00) - C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE - G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N) - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract The present disclosure provides a fluorescent nitrogen-vacancy diamond (FNVD) having a plurality of nitrogen-vacancy centers with a concentration about 1 ppm to 10,000 ppm. The FNVD as built-in fluorophores exhibit a nearly constant emission profile over 540 nm to 850 nm upon excitation by vacuum ultraviolet (VUV), extreme ultraviolet (EUV) and X-rays for the energy larger than 6.2 eV. Applying the FNVD sensor can measure VUV/EUV/X-rays as a sensing sheet, manufacturing method and uses thereof, sensor and lithography apparatus. The superb photostability and broad applicability of FNVDs offer a promising solution for the long-standing problem of lacking robust and reliable detectors for VUV, EUV, and X-rays. ## Claims ### Claim 1 A fluorescent nitrogen-vacancy diamond (FNVD) sensing sheet, having a plurality of nitrogen-vacancy centers of concentration about 1 ppm to about 10,000 ppm; wherein, on absorbing a first radiation, the FNVD sensing sheet emits a second radiation, wherein the first radiation has a wavelength range less than 250 nm, and the second radiation has a wavelength range 540 nm to 850 nm. ### Claim 2 (depends on 1) The FNVD sensing sheet of claim 1, wherein the spectrum of the second radiation has a peak wavelength about 573 nm to 578 nm. ### Claim 3 (depends on 1) The FNVD sensing sheet of claim 1, wherein the FNVD sensing sheet converts the first radiation into a fluorescence with a quantum yield at least 0.1. ### Claim 4 (depends on 1) A method for manufacturing a FNVD sensing sheet according to claim 1, comprising: preparing a plurality of FNVD powders, and shaping the FNVD powders. ### Claim 5 (depends on 4) The method for manufacturing the FNVD sensing sheet of claim 4, wherein the operation of preparing the plurality of FNVD powders further comprises forming a vacancy defect in a type Ib diamond powder and diffusing the vacancy defect into a peripheral of nitrogen atoms of the FNVD powders. ### Claim 6 (depends on 5) The method for manufacturing the FNVD sensing sheet of claim 5, further comprising: annealing the FNVD powders at a temperature in a range from about 600 degrees Celsius to about 1000 degrees Celsius. ### Claim 7 (depends on 5) The method for manufacturing the FNVD sensing sheet of claim 5, further comprising: shaping the FNVD powders by pressing, coating or heating the FNVD powders. ### Claim 8 (depends on 7) The method for manufacturing the FNVD sensing sheet of claim 7, further comprising: heating the FNVD powders in an oxygen-deficient environment or in a vacuum environment to a temperature in a range from about 200 degrees Celsius to about 1500 degrees Celsius. ### Claim 9 (depends on 4) The method for manufacturing the FNVD sensing sheet of claim 4, further comprising: mixing the FNVD powders with an additive, wherein the additive is at least one element selected from the group consisting of Mo, W, Nb, Ta, Re, Ti, V, Fe, Co, Ni, Al, Zr, Mg, Ca, Cs, Si and B, or a compound thereof. ### Claim 10 (depends on 4) The method for manufacturing the FNVD sensing sheet of claim 4, further comprising: removing a graphitic carbon at a surface of the FNVD powder. ### Claim 11 A sensor, comprising: a first sensing unit, having a plurality of nitrogen-vacancy centers with a concentration about 1 ppm to about 10,000 ppm, and configured to absorb a first radiation and emit a second radiation; and a second sensing unit, configured to detect the second radiation; wherein the first radiation has a wavelength range less than 250 nm; and the second radiation has a wavelength range 540 nm to 850 nm. ### Claim 12 (depends on 11) The sensor of claim 11, wherein the second sensing unit comprises a photomultiplier or a photocell or a photodiode or a solar cell. ### Claim 13 (depends on 11) The sensor of claim 11, wherein when the first radiation passes the first sensing unit and is absorbed, the first sensing unit converts the first radiation into a fluorescence with a quantum yield at least 0.1. ### Claim 14 (depends on 11) A lithography apparatus, comprising a sensor of claim 11. ### Claim 15 (depends on 14) The lithography apparatus of claim 14, further comprising a radiation source, configured to emit the first radiation. ### Claim 16 (depends on 14) The lithography apparatus of claim 14, further comprising a processor, configured to generate an emission spectrum of the second radiation. ### Claim 17 (depends on 1) A method for sensing radiation, comprising: providing an FNVD sensing sheet according to claim 1, which has a plurality of nitrogen-vacancy centers with a concentration about 1 ppm to about 10,000 ppm; exposing the FNVD sensing sheet to a first radiation, wherein the FNVD sensing sheet emits a second radiation corresponding to the first radiation after being exposed to the first radiation, and generating a spectrum of the second radiation; wherein the first radiation has a wavelength range less than 250 nm, and the second radiation has a wavelength range 540 nm to 850 nm.