# US 11,029,288 B2 · Sensor apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,029,288 B2 - Document ID: US11029288B2 - Status: Granted - Kind: B2 - Application number: 15/305,766 - Filed: 2015-10-30 - Published: 2017-08-10 - Granted: 2021-06-08 - Earliest claimed: 2014-10-30 - Assignees: KYOCERA Corporation - Applicants: Kyocera Corporation - Inventors: Kyohei Kobayashi - Web page: https://patentgrep.com/patent/US11029288B2 ## CPC - G01N 29/2462: {Probes with waveguides, e.g. SAW devices} - G01N 29/022: {Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices (microdevices per se B81B)} - G01N 29/222: {Constructional or flow details for analysing fluids (optoacoustic fluid cells G01N29/2425)} - H03H 9/145: for networks using surface acoustic waves - G01N 2291/022: Liquids - G01N 2291/0255: (Bio)chemical reactions, e.g. on biosensors - G01N 2291/0256: Adsorption, desorption, surface mass change, e.g. on biosensors - G01N 2291/0423: Surface waves, e.g. Rayleigh waves, Love waves - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) - H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P) ## Abstract A sensor apparatus includes: an element substrate; a detecting section disposed on an upper surface of the element substrate, the detecting section including a reaction section having an immobilization film to detect an analyte; a first IDT electrode configured to generate an acoustic wave which propagates toward the reaction section, and a second IDT electrode configured to receive the acoustic wave which has passed through the reaction section; and a protective film located on the upper surface of the element substrate so as to cover the first IDT electrode, the second IDT electrode, and at least part of the immobilization film, the protective film extending between and contacting with the immobilization film and at least one of the first IDT electrode and the second IDT electrode. ## Claims ### Claim 1 A sensor apparatus, comprising: an element substrate; a detecting section disposed on and in direct contact with an upper surface of the element substrate, the detecting section comprising a reaction section having an immobilization film to detect an object to be detected, a first IDT electrode configured to generate an acoustic wave which propagates toward the reaction section, and a second IDT electrode configured to receive the acoustic wave which has passed through the reaction section, wherein the first and second IDT electrodes are located on the upper surface of the element substrate; and a protective film located on the upper surface of the element substrate so as to cover the first IDT electrode, the second IDT electrode, and a first part of the immobilization film, wherein a second part of the immobilization film is not covered by the protective film, the protective film extending between and contacting the immobilization film and at least one of the first IDT electrode and the second IDT electrode, and wherein, in an upper surface of the immobilization film, a region covered with the protective film is at a higher level than a region which is not covered with the protective film. ### Claim 2 (depends on 1) The sensor apparatus according to claim 1, wherein the protective film covers the opposing ends of the immobilization film. ### Claim 3 (depends on 2) The sensor apparatus according to claim 2, wherein the protective film covers the opposing ends of the immobilization film but does not cover a central region of the immobilization film located between the opposing ends. ### Claim 4 (depends on 1) The sensor apparatus according to claim 1, wherein an upper surface of the immobilization film is inclined so that a level of the upper surface becomes lower as approaching from a region which is covered with the protective film to a region which is not covered with the protective film. ### Claim 5 (depends on 1) The sensor apparatus according to claim 1, wherein a thickness of the immobilization film in a region which is covered with the protective film is greater than a thickness of the immobilization film in a region which is not covered with the protective film. ### Claim 6 (depends on 1) The sensor apparatus according to claim 1, wherein a thickness of the immobilization film becomes smaller as approaching from a region which is covered with the protective film to a region which is not covered with the protective film. ### Claim 7 (depends on 1) The sensor apparatus according to claim 1, wherein a region which is covered with the protective film in an upper surface of the immobilization film is at a same level as at least one of an upper surface of the first IDT electrode and an upper surface of the second IDT electrode. ### Claim 8 (depends on 1) The sensor apparatus according to claim 1, wherein a region which is not covered with the protective film in an upper surface of the immobilization film is at a lower level than at least one of an upper surface of the first IDT electrode and an upper surface of the second IDT electrode. ### Claim 9 (depends on 1) The sensor apparatus according to claim 1, wherein a surface roughness of a region on which the immobilization film is located in the upper surface of the element substrate is smaller than a surface roughness of an upper surface of the immobilization film. ### Claim 10 (depends on 1) The sensor apparatus according to claim 1, wherein a surface roughness of a region which is not covered with the protective film in an upper surface of the immobilization film is greater than at least one of a surface roughness of an upper surface of the first IDT electrode and a surface roughness of an upper surface of the second IDT electrode. ### Claim 11 (depends on 1) The sensor apparatus according to claim 1, wherein a surface roughness of a region which is covered with the protective film in an upper surface of the immobilization film is equal to a surface roughness of an upper surface of the first IDT electrode and a surface roughness of an upper surface of the second IDT electrode. ### Claim 12 (depends on 1) The sensor apparatus according to claim 1, wherein a material of the immobilization film is a same as a material of the first IDT electrode and a material of the second IDT electrode. ### Claim 13 (depends on 1) The sensor apparatus according to claim 1, wherein the protective film is located between the immobilization film and at least one of the first IDT electrode and the second IDT electrode. ### Claim 14 (depends on 1) The sensor apparatus according to claim 1, wherein an end of the protective film located on a side of the immobilization film comprises a lower end part and an upper end part, the lower end part being closer to a center part of the immobilization film than the upper end part when viewed in a lateral section. ### Claim 15 (depends on 1) The sensor apparatus according to claim 1, wherein an end of the protective film located on a side of the immobilization film comprises a lower end part and an upper end part, the end being inclined so that a distance between the end and a center part of the immobilization film becomes shorter as the end going from the upper end part to the lower end part when viewed in a lateral section. ### Claim 16 (depends on 1) The sensor apparatus according to claim 1, wherein a thickness of the protective film is smaller than at least one of a thickness of the first IDT electrode and a thickness of the second IDT electrode. ### Claim 17 (depends on 1) The sensor apparatus according to claim 1, wherein the protective film contacts side surfaces of the first and second IDT electrodes and contacts the upper surface of the element substrate between the detecting section and the first or second IDT electrodes.