# US 11,029,213 B2 · Epitaxial graphene quantum dots for high-performance terahertz bolometers

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- Number: US 11,029,213 B2
- Document ID: US11029213B2
- Status: Granted
- Kind: B2
- Application number: 15/780,132
- Filed: 2016-12-06
- Published: 2020-10-01
- Granted: 2021-06-08
- Earliest claimed: 2015-12-07
- Assignees: Georgetown University; The Government of the United States, as Repressented by the Secretary of the Navy
- Applicants: Kurt Gaskill; Georgetown University; U.S. Naval Research Laboratory
- Inventors: Abdel El Fatimy; Paola Barbara; David Kurt Gaskill
- Web page: https://patentgrep.com/patent/US11029213B2

## CPC

- G01J 5/20: using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J 5/023: {Particular leg structure or construction or shape; Nanotubes}
- G01J 5/0837: {Microantennas, e.g. bow-tie}
- H10D 48/387: {Devices controllable only by the variation of applied heat}
- H10D 62/814: {Quantum box structures}
- H10D 62/82: Heterojunctions
- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Devices including graphene quantum dots yield extremely high performance THz bolometers, by measuring the current of hot electrons formed in the graphene source and drain electrodes of the device and propagating through the graphene quantum dot connected thereto. Devices may also include additional materials such as MoS2, as well as one or more gate electrodes to alter performance as needed.

## Claims

### Claim 1

A hot-electron bolometer comprising:
a SiC substrate;
a radiation detection area including a quantum dot pattern of epitaxial graphene formed on the SiC substrate; and
a source electrode and drain electrode contacting the quantum dot pattern.

### Claim 2 (depends on 1)

The hot-electron bolometer of claim 1, wherein the source electrode and the drain electrode are formed of graphene and layers of Cr and Au.

### Claim 3 (depends on 1)

The hot-electron bolometer of claim 1, further comprising an antenna coupled thereto.

### Claim 4 (depends on 1)

The hot-electron bolometer of claim 1, wherein the quantum dot pattern includes a quantum dot having a diameter approximately equal to or less than 200 nm.

### Claim 5 (depends on 1)

The hot-electron bolometer of claim 1, wherein the SiC substrate surface includes basal plane terraces bounded by steps.

### Claim 6 (depends on 5)

The hot-electron bolometer of claim 5, wherein the quantum dot pattern is arranged such that current flow is perpendicular to the steps of the SiC substrate surface.

### Claim 7 (depends on 1)

The hot-electron bolometer of claim 1, further comprising at least one gate electrode.

### Claim 8 (depends on 7)

The hot-electron bolometer of claim 7, wherein the at least one gate electrode is formed on at least part of the quantum dot pattern.

### Claim 9 (depends on 1)

The hot-electron bolometer of claim 1, further comprising magnetic molecules grafted to the quantum dot pattern.

### Claim 10 (depends on 1)

The hot-electron bolometer of claim 1, further comprising multiple quantum dot patterns connected in parallel formed on the SiC substrate.