# US 11,028,979 B2 · Lighting source using solid state emitter and phosphor materials

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- Number: US 11,028,979 B2
- Document ID: US11028979B2
- Status: Granted
- Kind: B2
- Application number: 15/268,736
- Filed: 2016-09-19
- Published: 2017-01-05
- Granted: 2021-06-08
- Earliest claimed: 2004-05-05
- Assignees: Rensselaer Polytechnic Institute
- Applicants: Rensselaer Polytechnic Institute
- Inventors: Nadarajah Narendran; Yimin Gu
- Web page: https://patentgrep.com/patent/US11028979B2

## CPC

- F21K 9/64: using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
- F21K 2/00: Non-electric light sources using luminescence (using excitation by radioactivity G21H3/02, H01J65/06, H01J65/08; using excitation by an external electromagnetic field or by external corpuscular radiation H01J65/04); Light sources using electrochemiluminescence
- F21V 3/02: characterised by the shape
- F21V 5/004: {using microlenses}
- F21V 7/06: with parabolic curvature
- F21V 9/08: for producing coloured light, e.g. monochromatic; for reducing intensity of light (with provision for controlling the colour F21V9/40)
- F21V 9/32: characterised by the arrangement of the photoluminescent material
- F21V 9/38: Combination of two or more photoluminescent elements of different materials
- F21V 9/45: by adjustment of photoluminescent elements
- F21V 13/14: the elements being filters or photoluminescent elements, reflectors and refractors
- H10H 20/8516: {having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient}
- F21Y 2113/13: comprising an assembly of point-like light sources
- F21Y 2115/10: Light-emitting diodes [LED]
- F21Y 2115/30: Semiconductor lasers
- H10H 20/8515: {not being in contact with the bodies}
- H10H 20/855: Optical field-shaping means, e.g. lenses
- H10H 20/882: {Scattering means (H10H20/82 takes precedence)}
- H10W 90/00: Package configurations
- F21K: NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21V: FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- F21Y: INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A light-emitting apparatus includes a base, a first semiconductor radiation emitting diode, having a top surface and a side wall, disposed on the base, a transparent structure disposed on the base and surrounding the side wall and covering the top surface, and a phosphor structure placed within the transparent structure surrounding the side wall and covering the top surface. The first semiconductor radiation emitting diode has a width smaller than that of the base and is configured to emit a light which can be converted into a forward transferred down-converted radiation light and a back transferred down-converted radiation light by the phosphor structure. At least a portion of the forward transferred down-converted radiation light and the back transferred down-converted radiation light are emitted toward the base.

## Claims

### Claim 1

A light-emitting apparatus comprising:
a base;
a first semiconductor radiation emitting diode disposed on the base, and having a top surface, a side wall, and a width smaller than that of the base; and
a phosphor structure comprising a first portion with a first phosphor material therein and a second portion with a second phosphor material therein, the first portion and the second portion being separated from each other,
wherein the first portion has a first end proximal the first semiconductor radiation emitting diode and a second end distal the first semiconductor radiation emitting diode, the proximal end having a width smaller than a width of the distal end, and the second portion is centrally located at the distal end as measured along the width of the distal end, and
wherein the first semiconductor radiation emitting diode is configured to emit a primary light which is converted into a forward transferred down-converted radiation light and a back transferred down-converted radiation light by both of the first portion and the second portion.

### Claim 2 (depends on 1)

The light-emitting apparatus of claim 1, wherein the base is pervious to light from the first semiconductor radiation emitting diode.

### Claim 3 (depends on 1)

The light-emitting apparatus of claim 1, further comprising a second semiconductor radiation emitting diode arranged with the first semiconductor radiation emitting diode in an array configuration on the base.

### Claim 4 (depends on 1)

The light-emitting apparatus of claim 1, further comprising a transparent structure disposed on the base and directly contacting the side wall and the top surface,
wherein the transparent structure has an upper portion and a lower portion which have different widths in a cross-sectional view.

### Claim 5 (depends on 1)

The light-emitting apparatus of claim 1, wherein the base has an upper surface on which the first semiconductor radiation emitting diode is disposed, and a bottom surface devoid of the phosphor structure.

### Claim 6 (depends on 1)

The light-emitting apparatus of claim 1, further comprising a transparent structure disposed on the base and directly contacting the side wall and the top surface,
wherein the transparent structure has a transparent side wall, and at least a portion of the forward transferred down-converted radiation light and the back transferred down-converted radiation light are configured to pass through the transparent side wall.

### Claim 7 (depends on 6)

The light-emitting apparatus of claim 6, wherein the transparent side wall is not perpendicular to the base.

### Claim 8 (depends on 1)

The light-emitting apparatus of claim 1, wherein the first portion, the second portion, or both portions of the phosphor structure are sandwiched between the first semiconductor radiation emitting diode and the base.

### Claim 9 (depends on 1)

The light-emitting apparatus of claim 1, wherein the first portion, the second portion, or both portions of the phosphor structure contact the base.

### Claim 10 (depends on 1)

The light-emitting apparatus of claim 1, wherein the first portion and the second portion are disposed on different locations of the base.

### Claim 11 (depends on 4)

The light-emitting apparatus of claim 4, wherein the first portion, the second portion, or both portions of the phosphor structure are placed within the transparent structure.