# US 11,028,482 B2 · Use of voltage and current measurements to control dual zone ceramic pedestals > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,028,482 B2 - Document ID: US11028482B2 - Status: Granted - Kind: B2 - Application number: 16/859,619 - Filed: 2020-04-27 - Published: 2020-08-13 - Granted: 2021-06-08 - Earliest claimed: 2018-05-07 - Assignees: Lam Research Corporation - Applicants: Lam Research Corporation - Inventors: Aaron Durbin; Ramesh Chandrasekharan; Dirk Rudolph; Thomas G. Jewell - Web page: https://patentgrep.com/patent/US11028482B2 ## CPC - C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} - C23C 16/45525: {Atomic layer deposition [ALD]} - C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices} - C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) - H05B 1/0233: {for semiconductors manufacturing} - H05B 3/265: {the insulating base being an inorganic material, e.g. ceramic (H05B3/262 takes precedence)} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL ## Abstract A method for controlling temperature of a substrate support includes receiving first and second currents corresponding to first and second heater elements, respectively, of a substrate support, receiving first and second voltages corresponding to the first and second heater elements, respectively, calculating a first resistance of the first heater element based on the first voltage and the first current, calculating a second resistance of the second heater element based on the second voltage and the second current, calculating a first temperature of a first zone of the substrate support based on the first resistance and stored data correlating resistances to temperatures, calculating a second temperature of a second zone of the substrate support based on the second resistance and the stored data, and selectively adjusting the stored data based on a comparison between a sensed temperature and at least one of the calculated first temperature and second temperature. ## Claims ### Claim 1 A method for controlling temperature of a substrate support in a substrate processing system, the method comprising: receiving a first current and a second current corresponding to a first heater element and a second heater element, respectively, of a substrate support; receiving a first voltage and a second voltage corresponding to the first heater element and the second heater element, respectively; calculating a first resistance of the first heater element based on the first voltage and the first current; calculating a second resistance of the second heater element based on the second voltage and the second current; calculating a first temperature of a first zone of the substrate support based on the first resistance and stored data correlating resistances to temperatures; calculating a second temperature of a second zone of the substrate support based on the second resistance and the stored data; selectively adjusting the stored data based on a comparison between a sensed temperature and at least one of the calculated first temperature and second temperature; and separately controlling power provided to the first heater element and the second heater element based on the first resistance and the second resistance, respectively, and respective relationships between (i) the first resistance and the first temperature and (ii) the second resistance and the second temperature. ### Claim 2 (depends on 1) The method of claim 1, further comprising (i) calculating a first power associated with the first heater element based on the first voltage and the first current and (ii) calculating a second power associated with the second heater element based on the second voltage and the second current. ### Claim 3 (depends on 1) The method of claim 1, wherein controlling the power based on the first resistance and the second resistance includes controlling the power provided to the first heater element and the second heater element based on the first temperature and the second temperature, respectively. ### Claim 4 (depends on 3) The method of claim 3, further comprising calculating the first temperature and the second temperature based on a thermal coefficient of resistance of a material of the first heater element and the second heater element. ### Claim 5 (depends on 4) The method of claim 4, wherein the material has a thermal coefficient of resistance of at least 1.0%. ### Claim 6 (depends on 4) The method of claim 4, wherein the stored data includes data correlating resistances of the material with respective temperatures of the material. ### Claim 7 (depends on 6) The method of claim 6, wherein the stored data includes a conversion table. ### Claim 8 (depends on 7) The method of claim 7, further comprising (i) calculating a correction factor based on differences between a plurality of measured temperatures of at least one of the first zone and the second zone and a plurality of calculated temperatures of the first zone and the second zone and (ii) modifying an output of the conversion table based on the correction factor. ### Claim 9 (depends on 3) The method of claim 3, further comprising calculating the first temperature and the second temperature during an atomic layer deposition process. ### Claim 10 (depends on 3) The method of claim 3, further comprising, in response to a change in a thermal load in the first zone causing a change in the first resistance, adjusting the power provided to the first heater element. ### Claim 11 (depends on 3) The method of claim 3, further comprising adjusting the power provided to the first heater element and the second heater element such that the first temperature and the second temperature are different. ### Claim 12 (depends on 1) The method of claim 1, further comprising, using a controller, controlling an atomic layer deposition process performed on a substrate arranged on the substrate support. ### Claim 13 A method for controlling temperature of a substrate support in a substrate processing system, the method comprising: receiving a first current and a second current corresponding to a first heater element and a second heater element, respectively, of the substrate support; receiving a first voltage and a second voltage corresponding to the first heater element and the second heater element, respectively; calculating a first resistance of the first heater element based on the first voltage and the first current; calculating a second resistance of the second heater element based on the second voltage and the second current; calculating a first temperature of a first zone of the substrate support based on the first resistance and stored data correlating resistances to temperatures; calculating a second temperature of a second zone of the substrate support based on the second resistance and the stored data; and selectively adjusting the stored data based on a comparison between a sensed temperature and at least one of the calculated first temperature and second temperature.