# US 11,028,478 B2 · Atomic layer deposition of films comprising silicon, carbon and nitrogen using halogenated silicon precursors

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- Number: US 11,028,478 B2
- Document ID: US11028478B2
- Status: Granted
- Kind: B2
- Application number: 16/006,010
- Filed: 2018-06-12
- Published: 2018-10-11
- Granted: 2021-06-08
- Earliest claimed: 2013-11-22
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Victor Nguyen; Ning Li; Mihaela Balseanu; Li-Qun Xia; Mark Saly; David Thompson
- Web page: https://patentgrep.com/patent/US11028478B2

## CPC

- C23C 16/45553: {characterized by the use of precursors specially adapted for ALD}
- C23C 16/345: {Silicon nitride}
- C23C 16/36: Carbonitrides
- C23C 16/45536: {Use of plasma, radiation or electromagnetic fields}
- C23C 16/4554: {Plasma being used non-continuously in between ALD reactions (C23C16/56 takes precedence)}
- C23C 16/45542: {Plasma being used non-continuously during the ALD reactions}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.

## Claims

### Claim 1

A method of depositing a film comprising Si, C and N, the method comprising
exposing a substrate surface to a silicon precursor, wherein the silicon precursor comprises a halogenated bis(silyl) methane precursor selected from the group consisting of:
and
exposing the substrate to a nitrogen-containing plasma or a nitrogen precursor.

### Claim 2

A method of depositing a film comprising Si, C and N, the method comprising:
exposing a substrate surface to a silicon precursor, wherein the silicon precursor is a halogenated bis(silyl) methane-based precursor is selected from the group consisting of
and
exposing the substrate to a nitrogen-containing plasma.

### Claim 3 (depends on 2)

The method of claim 2, wherein the nitrogen-containing plasma comprises ammonia, an amine or carbonitride.

### Claim 4

A method of depositing a film comprising Si, C and N, the method comprising:
exposing a substrate surface to a silicon precursor, wherein the silicon precursor comprises a halogenated bis(silyl) methane precursor selected from the group consisting of:
exposing the substrate surface to a nitrogen precursor to provide a film; and
exposing the film to a densification plasma.

### Claim 5 (depends on 4)

The method of claim 4, wherein the nitrogen precursor comprises an alkyl amine.

### Claim 6 (depends on 4)

The method of claim 4, further comprising exposing the film comprising Si and N to a carbon source.

### Claim 7 (depends on 6)

The method of claim 6, wherein the carbon source comprises exposing the film to a compound with a C═C bond.