# US 11,028,343 B2 · Cleaning agent composition for substrate for semiconductor device

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- Number: US 11,028,343 B2
- Document ID: US11028343B2
- Status: Granted
- Kind: B2
- Application number: 16/474,918
- Filed: 2017-12-22
- Published: 2021-05-06
- Granted: 2021-06-08
- Earliest claimed: 2016-12-28
- Assignees: Kao Corporation
- Applicants: Kao Corporation
- Inventors: Daisuke Kayakubo; Jun Naganuma
- Web page: https://patentgrep.com/patent/US11028343B2

## CPC

- C11D 3/042: {Acids}
- C11D 7/08: Acids
- C11D 3/2096: {Heterocyclic compounds}
- C11D 3/3427: {containing thiol, mercapto or sulfide groups, e.g. thioethers or mercaptales}
- C11D 3/349: {additionally containing nitrogen atoms, e.g. nitro, nitroso, amino, imino, nitrilo, nitrile groups containing compounds or their derivatives or thio urea}
- C11D 7/265: {Carboxylic acids or salts thereof}
- C11D 7/34: containing sulfur
- C11D 17/0008: {aqueous liquid non soap compositions (C11D3/0015, C11D3/3947, C11D3/3956 take precedence)}
- H10P 52/00: Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P 70/00: Cleaning of wafers, substrates or parts of devices
- H10P 70/237: {the processing being a planarisation of insulating layers}
- C11D 2111/22: Electronic devices, e.g. PCBs or semiconductors
- C11D: DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

In one aspect, provided is a cleaning agent composition for a substrate for a semiconductor device, the cleaning agent composition having excellent cleaning properties against ceria and being capable of reducing a temporal change in the solubility of ceria. In one aspect, the present disclosure relates to a cleaning agent composition for a substrate for a semiconductor device, the cleaning agent composition containing a component A, a component B, a component C, and a component D, the component A being sulfuric acid; the component B being ascorbic acid; the component C being at least one of thiourea and dithiothreitol and the component D being water.

## Claims

### Claim 1

A cleaning agent composition for a substrate for a semiconductor device, the cleaning agent composition containing a component A, a component B, a component C, and a component D,
the component A being sulfuric acid;
the component B being ascorbic acid;
the component C being at least one of thiourea and dithiothreitol; and
the component D being water.

### Claim 2 (depends on 1)

The cleaning agent composition according to claim 1,
wherein a mass ratio BIC of a content of the component B to a content of the component C is 0.05 to 10 inclusive.

### Claim 3 (depends on 1, 2)

The cleaning agent composition according to claim 1 or 2,
wherein a total content of the component B and the component C at the time of cleaning is 0.001 mass % to 1 mass % inclusive.

### Claim 4 (depends on 1)

The cleaning agent composition according to claim 1,
wherein a content of the component A at the time of cleaning is 0.005 mass % to 0.5 mass % inclusive.

### Claim 5 (depends on 1)

The cleaning agent composition according to claim 1, further containing
a dispersing agent (a component E).

### Claim 6 (depends on 1)

A method for cleaning a substrate for a semiconductor device, the method comprising
a cleaning step of cleaning a substrate to be cleaned, using the cleaning agent composition according to claim 1,
wherein the substrate to be cleaned is a substrate that has processed polishing using a polishing liquid composition containing ceria.

### Claim 7 (depends on 1)

A method for manufacturing a substrate for a semiconductor device, the method comprising
a cleaning step of cleaning a substrate to be cleaned, using the cleaning agent composition according to claim 1,
wherein the substrate to be cleaned is a substrate that has processed polishing using a polishing liquid composition containing ceria.

### Claim 8 (depends on 1)

A method for manufacturing a substrate for a semiconductor device, the method comprising:
step 1 of polishing a substrate using a polishing liquid composition containing ceria; and
step 2 of cleaning a substrate that has been polished in the step 1, using the cleaning agent composition according to claim 1.