# US 11,028,321 B2 · Etching composition, method for etching insulating layer of semiconductor devices and method for preparing semiconductor devices

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- Number: US 11,028,321 B2
- Document ID: US11028321B2
- Status: Granted
- Kind: B2
- Application number: 16/594,491
- Filed: 2019-10-07
- Published: 2020-04-30
- Granted: 2021-06-08
- Earliest claimed: 2018-10-26
- Assignees: SK Innovation Co., Ltd.; SK-Materials Co., Ltd.
- Applicants: SK Innovation Co., Ltd.; SK-Materials Co., Ltd.
- Inventors: Cheol Woo Kim; Yu Na Shim; Kwang Kuk Lee; Jae Hoon Kwak; Young Bom Kim; Jong Ho Lee; Jin Kyung Jo
- Web page: https://patentgrep.com/patent/US11028321B2

## CPC

- C09K 13/06: with organic material
- H10P 50/283: {by chemical means}
- C23F 1/10: Etching compositions (C23F1/44 takes precedence)
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23F: NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE (working metal by laser beams B23K26/00; desurfacing by applying flames B23K7/00; working of metal by electro-erosion B23H; producing decorative effects by removing surface material, e.g. by engraving, by etching, B44C1/22; electrolytic etching or polishing C25F); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25

## Abstract

An etching composition is provided. The etching composition includes phosphoric acid, phosphoric anhydride, a silane compound represented by Formula 1 below and water: wherein R1 to R6 are independently hydrogen, halogen, a substituted or unsubstituted C1-C20 hydrocarbyl group, a C1-C20 alkoxy group, a carboxy group, a carbonyl group, a nitro group, a tri(C1-C20-alkyl)silyl group, a phosphoryl group, or a cyano group. L is a direct bond or C1 to C3 hydrocarbylene, and A is an n-valent radical, while n is an integer of 1 to 4.

## Claims

### Claim 1

An etching composition comprising:
phosphoric acid;
phosphoric anhydride;
a silane compound represented by Formula 1 below; and
water:
wherein
R1 to R6 are independently hydrogen, halogen, a substituted or unsubstituted C1-C20 hydrocarbyl group, a C1-C20 alkoxy group, a carboxy group, a carbonyl group, a nitro group, a tri (C1-C20-alkyl) silyl group, a phosphoryl group, or a cyano group,
L is a direct bond or C1-C3 hydrocarbylene,
A is an n-valent radical, and
n is an integer of 1 to 4.

### Claim 2 (depends on 1)

The etching composition of claim 1, wherein the substituted or unsubstituted C1-C20 hydrocarbyl group is a substituted or unsubstituted C1-C20 alkyl group or a substituted or unsubstituted C6-C20 aryl group.

### Claim 3 (depends on 2)

The etching composition of claim 2, wherein the substituted C1-C20 hydrocarbyl group is substituted with halogen.

### Claim 4 (depends on 1)

The etching composition of claim 1, wherein A is hydrocarbyl, hydrocarbylene, a radical having N as a binding site, a radical having O as a binding site, a radical having S as a binding site or a radical having P as a binding site.

### Claim 5 (depends on 4)

The etching composition of claim 4, wherein the hydrocarbyl is C1-C20 alkyl, C2-C20 alkenyl, or C6-C20 aryl.

### Claim 6 (depends on 4)

The etching composition of claim 4, wherein the radical having N as a binding site is *—NR11R12, *—NR13—*, *—NR14CONR15—*, *—NR16CSNR17—*, or
wherein R11 and R12 are independently hydrogen, C1-C20 alkyl, C1-C20 aminoalkyl, or CONH2,
R13 to R17 are independently hydrogen or C1-C20 alkyl, and
L1 is C1-C20 alkylene.

### Claim 7 (depends on 4)

The etching composition of claim 4, wherein the radical having S as a binding site is *—S—*, *—S—S—*,

### Claim 8 (depends on 4)

The etching composition of claim 4, wherein the radical having P as a binding site is
wherein R18 and R19 are independently hydrogen, C1-C20 alkyl, C6-C20 aryl, or (C1-C20)alkyl(C1-C20)alkoxy.

### Claim 9 (depends on 1)

The etching composition of claim 1, wherein
n is 1,
L is the direct bond or C1-C3 alkylene,
A is substituted or unsubstituted C1-C20 alkyl, substituted or unsubstituted C1-C20 alkenyl, *—NH2, *—NH— (CH2)1—NH2, *—NH—CO—NH2, or *—(CH2)m—C6H5, and
l and m are independently an integer of 0 to 10.

### Claim 10 (depends on 1)

The etching composition of claim 1, wherein
n is 2,
L is a direct bond or C1-C3 alkylene,
A is C1-C20 alkylene, *—NR13—*, *—NR14—CO—NR15—*, *—S—*, *—S—S—*,
and
R13 to R15, R18, and R19 are independently hydrogen, C1-C20 alkyl, C6-C20 aryl, or (C1-C20)alkyl(C1-C20)alkoxy.

### Claim 11 (depends on 1)

The etching composition of claim 1, wherein
n is 3,
L is a direct bond or C1-C3 alkylene, and
A is

### Claim 12 (depends on 1)

The etching composition of claim 1, wherein
n is 4,
L is C1-C3 alkylene, and
A is
wherein L1 is C1-C10 alkylene.

### Claim 13 (depends on 1)

The etching composition of claim 1, wherein R1 to R6 are hydrogen.

### Claim 14 (depends on 1)

The etching composition of claim 1, wherein R1 is substituted or unsubstituted hydrocarbyl, and R2 to R6 are hydrogen.

### Claim 15 (depends on 1)

The etching composition of claim 1, wherein the silane compound is selected from the following structures:

### Claim 16 (depends on 1)

The etching composition of claim 1, wherein the phosphoric anhydride is at least one of water-removed pure phosphoric acid, pyrophosphoric acid, polyphosphoric acid having at least 3Ps and metaphosphoric acid.

### Claim 17 (depends on 1)

The etching composition of claim 1, wherein the etching composition comprises the phosphoric acid in an amount of 70 wt % to 95 wt %, the phosphoric anhydride in an amount of 1 wt % to 20 wt %, the silane compound in an amount of 0.001 wt % to 5 wt %, and a remainder of water.

### Claim 18 (depends on 1)

The etching composition of claim 1, further comprising a silane compound represented by the following Formula 2:
wherein R51 to R54 are independently hydrogen, hydrocarbyl, or heterohydrocarbyl, and R51 to R54 individually exist or two or more thereof form a ring, connected by a heteroelement.

### Claim 19 (depends on 1)

A method of etching an insulating film using the etching composition of claim 1.

### Claim 20 (depends on 19)

A method of manufacturing a semiconductor device comprising the method of etching an insulating film of claim 19.